OPTICAL SOURCES

LED :
• HomoJunction LED

• HeteroJunction LED

• Burrus Etched

• Edge Emitting LED

• HomoJunction LED :

– A homojunction is
a semiconductor interface that
occurs between layers of similar
semiconductor material, these
materials have equal band
gaps but typically have
different doping.
• HeteroJunction LED:

– It is the interface that occurs between

two region of dissimilar crystalline
semiconductors. These semiconducting
materials have unequal band gaps as
opposed to a homo junction.
• Burrus Etched :
– Surface emitter LED (SLED)
operates at 850nm
wavelength. SLED is a five
layered double hetrojunction
on device consisting of a
GaAs and GaAlAs layers.
BURRUS ETCHED A.K.A SLED
• Edge Emitting LED :
– A light-emitting diode with
output that emanates from
between the heterogeneous
layers. It has greater
radiance and coupling
efficiency to an optical fiber
or integrated optical circuit
than a surface-emitting LED
Edge emitting led
INJECTION LASER DIODE (ILD) :
• GAS LASER

• LIQUID LASER

• SOLID LASER

• SEMICONDUCTOR LASER
• Gas Laser :
– Gas lasers consist of a gas filled tube
placed in the laser cavity. A voltage is
applied to the tube to excite atoms in the
gas to a population inversion. The light
emitted from this type of laser is normally
continuous wave.
• Liquid Laser :

– Liquid laser are used as active medium

inside the glass tube. The complete
circulation of liquid is done in the tube with
the help of a pump. From this laser light will
emerge out.
• Solid Laser :
– Solid state laser is having material distributed
in a solid matrix such as ruby or neodymium :
YTTIRUM ALUMINUM GARNET “YAG”. This
type is flash lamps are the common power
source. The YAG laser emits infrared light.
• Semiconductor Lasers :
– Semiconductor or sometimes called diode
laser, are p-n junction. Current is the pump
source.
– Semiconductor lasers are lasers based on
semiconductor gain media, where optical
gain is usually achieved by stimulated
emission at an interband transition under
conditions of a high carrier density in the
conduction band