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Complex structures
Antenna array Complex materials
elements Active/nonlinear devices
Antenna feeds
Complex structures
Distributed feed Complex materials
network Multi-layers
Passive/active circuit elements
Solution Strategy
Problem configuration Simulation techniques
j-jin1@uiuc.edu
Typical Feed Structures
Antenna element (opened for
visualization of interior structures)
Details showing
coaxial cable,
microstrip line and
radial stub.
Feed Modeling
1. Probe model (Simple & approximate)
At the port:
E E a m e m ( x, y ) e m z
inc
m 0
E inc
a eTEM
0 0 ( x, y ) e jkz
a e ( x, y ) e
TE
m m
mz
bmeTM
m ( x, y ) e
mz
m 1 m 1
nˆ E P(E) Uinc on S
Feed Modeling
Waveguide Port Boundary Condition
nˆ E P(E) Uinc on S
By mode decomposition:
P(E) e TEM
0 0 e
TEM
0 E dS me TE
m e m E dS
TE
S m 1 S
k2
e TM e
TM
E dS
m 1 m
m m
S
U inc nˆ Einc 0e TEM
0 e TEM
0 E inc
dS
S
k2
e TE
e E dS
TE inc
e TM e TM
E inc
dS
m
m m m m m
m 1 S m 1 S
Conversion to Time Domain
Frequency-domain operators: Time-domain operators:
s 1
0
c c t
Inverse Laplacian
Transform 1
m k s / c m hm (t ) *
2 2
cm
c t
k2 k2 1
m g m (t ) *
m 2
kcm s / c
2 c t
kcm
s j hm (t ) J1 (kcm ct )u (t )
t
kcm : cutoff frequencie s kcm
g m (t ) J1 (kcm ct )u (t ) kcm
2
cJ 0 (kcm ct )u (t )
t
Time-Domain WPBC
Time-Domain Formulation: nˆ E P(E) Uinc
P(E) e TEM
0 e
TEM
0 (E) dS e TE
m e m (E) dS
TE
S m 1 S
e TM
m m (E) dS
e TM
m 1 S
U inc nˆ Einc e0TEM eTEM
0 L (Einc ) dS
S
eTE
m e m H (E ) dS
TE inc
m 1 S
eTM
m e m G (E ) dS
TM inc
m 1 S
Measured data: J. Maloney, G. Smith, and W. Scott, “Accurate computation of the radiation from simple
antennas using the finite difference time-domain method,” IEEE Trans. A.P., vol. 38, July 1990.
Five-Monopole Array (Geometry)
Finite Ground Plane:
• 12’’ X 12’’
• Thickness: 0.125’’
SMA Connector:
unit: inch • Inner radius: 0.025’’
• Outer Radius: 0.081’’
• Permittivity: 2.0
Monopole Array (Impedance Matrix)
1 2 3 4 5
1
2
3
4
5
Monopole Array (Gain Pattern)
Feeding mode: Port V excited, Ports I-IV terminated. Freq: 4.7GHz
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD
0 0 0 0
-1000 -1000 -1000 -1000
-200 -200 -200 -200
-50 -50 -50 -50
Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz)
Z21
Real(Z21) Z22
Real(Z22) Z23
Real(Z23) Z24
Real(Z24)
600 600 600 600
200
Re(Z) - FEBI 200
Re(Z) - FEBI 200
Re(Z) - FEBI 200
Re(Z) - FEBI
500 Im(Z) - FEBI 500 Im(Z) - FEBI 500 Im(Z) - FEBI 500 Im(Z) - FEBI
Re(Z) - FETD Re(Z) - FETD Re(Z) - FETD Re(Z) - FETD
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD
0 0 0 0
-1000 -1000 -1000 -1000
-200 -200 -200 -200
-50 -50 -50 -50
Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz)
Z31
Real(Z31) Z32
Real(Z32) Z33
Real(Z33) Z34
Real(Z34)
600 600 600 600
200
Re(Z) - FEBI 200
Re(Z) - FEBI 200
Re(Z) - FEBI 200
Re(Z) - FEBI
500 Im(Z) - FEBI 500 Im(Z) - FEBI 500 Im(Z) - FEBI 500 Im(Z) - FEBI
Re(Z) - FETD Re(Z) - FETD Re(Z) - FETD Re(Z) - FETD
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD
0 0 0 0
-1000 -1000 -1000 -1000
-200 -200 -200 -200
-50 -50 -50 -50
Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz)
Z41
Real(Z41) Z42
Real(Z42) Z43
Real(Z43) Z44
Real(Z44)
600 600 600 600
200
Re(Z) - FEBI 200
Re(Z) - FEBI 200
Re(Z) - FEBI 200
Re(Z) - FEBI
500 Im(Z) - FEBI 500 Im(Z) - FEBI 500 Im(Z) - FEBI 500 Im(Z) - FEBI
Re(Z) - FETD Re(Z) - FETD Re(Z) - FETD Re(Z) - FETD
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
Input Impedance(Ohm)
400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD 400
150
Im(Z) - FETD
0 0 0 0
-1000 -1000 -1000 -1000
-200 -200 -200 -200
-50 -50 -50 -50
Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz) Frequency(GHz)
Frequency(GHz)
Patch Array (Gain Pattern at 3.0GHz)
x-z plane
Feeding mode:
_
+
_ +
y-z plane
Phasing Pattern:
0o 180o
o o
180 0
Antipodal Vivaldi Antenna
Reflection at the TEM port
E-plane
Radiation patterns
at 10 GHz
H-plane
Layer-by-Layer Finite Element
Modeling of Multi-Layered
Planar Circuits
H. Wu and A. C. Cangellaris
Center for Computational Electromagnetics
Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
Urbana, Illinois 61801-2991
cangella@uiuc.edu
Layer-by-Layer Decomposition
50-Ohm microstrip
Surface-mount cap
Via hole
gap
50-Ohm stripline
Two Signal Layers
Pins used to strap together top and
bottom ground planes
Input/output ports
Connecting ports
Connecting ports
1 1
0.9 0.98
0.8 0.96
0.7 0.94
0.6 0.92
S11
S11
0.5 0.9
0.4 0.88
0.3 0.86
0.2 0.84
0.1 0.82
0 0.8
2 2.5 3 3.5 4 2 2.5 3 3.5 4
Frequency(Hz) 9
x 10 Frequency (Hz) 9
x 10
Tunable band-pass filter (cont.)
Use of surface-mounted caps help alter the pass-band
characteristics of the filter
1
0.9
0.8
0.7
0.6
S11
0.5 Open
0.2pF, 0.05nH
0.4 0.5pF, 0.05nH
1pF, 0.05nH
0.3
0.2
0.1
0
2 2.5 3 3.5 4
Frequency (Hz) 9
x 10
Hybrid Antenna/Platform Modeling
Using Fast TDIE Techniques
emichiel@uiuc.edu
Progress in TDIE Schemes
Resulting from this MURI Effort
Amplifier built at University of Hawaii, supported through ARO Quasi-Optic MURI program.
Pictures from A. Guyette, et. al. “A 16-element reflection grid amplifier with improved heat sinking,”
IEEE MTT-S Int. Microwave Symp., pp. 1839-1842, May 2001.
Nonlinear Feed:
Reflection-Grid Amplifier
OUT RF Output &
E Bias
280
RF
input Bias
IN 355
E 1 pF
30
30 1 pF
355
Bias RF
input
280
Bias &
RF Output
Each chip is a 6-terminal
*A. Guyette, et. al. “A 16-element
reflection grid amplifier with differential-amplifier that
improved heat sinking,” IEEE is 0.4 mm on a side
MTT-S Int. Microwave Symp., pp.
1839-1842, May 2001.
Interfacing with ROMs:
Mixed Signal PCB with Antenna
Footprint of
1
Digital Chip 2 3
4 Ground layer
Top metallization (Antenna array)
Microwave
signal traces
Signal Layer
Power layer
6
7 9 10 Microwave
11 generators
5
Digital 8 Bottom layer
switching (electronics)
currents
Interfacing with ROMs:
Mixed Signal PCB with Antenna
Ex 1000 V/m
Ey 1000 V/m inc
E
f 4 GHz 3 GHz
k̂
y x
8 cm
1.5 m
k̂
inc
Ez -1000 V/m
E f 0.6 GHz 0.4 GHz
Interfacing with ROMs:
Mixed Signal PCB with Antenna
k̂
inc
Ez -1000 V/m
E f 0.6 GHz 0.4 GHz
Received at port 8
Cable Feeds:
TD LPMA Analysis
Glass windows, r 2.25
thickness: 3 cm
3.4 m
16.6 m
Coaxial cables
Shield radius: 3 mm
Cable Feeds:
TD LPMA Analysis
Antenna feed-point
Antenna feed-network
Cable Feeds:
TD LPMA Analysis
61 MHz 88 MHz
Using Loop Basis to Solve VIE, Wide-
Band FMA for Modeling Fine Details,
and a Novel Higher-Order Nystrom
Method
W. C. Chew
Center for Computational Electromagnetics
Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
Urbana, Illinois 61801-2991
w-chew@uiuc.edu
Volume Loop Basis
Advantages:
Divergence free
Less number of unknowns (A reduction of 30-40%)
Reduction in computation time
Easier to construct and use than other solenoidal
basis, e.g. surface loop basis; no special search
algorithm is needed.
Stable in convergence of iterative solvers even with the
existence of a null space
Ra 0.25m
Rb 0.1m
h 0.1m
Volume Loop Basis
Bistatic RCS:
7 x 7 fork structure
Novel Nystrom Method
Scattering by a pencil target:
20
a=0.1 m
10 d=3 m
t=0.173 m
0
f=1.0 GHz
-10
Bistatic RCS (dBsm)
-20
-30
t d Z
-40
-50
X a O
-60 Y
-70
0 50 100 150 200 250 300 350
f (degrees)
Novel Nystrom Method
Scattering by an ogive:
-10
HH
-15 VV
-20
-25
Monostatic RCS (dBsm)
-30
a=1 inch
d=5 inchs
-35 f=1.18 GHz
-40
Z
-45 d
-50 a
X O
-55 Y
-60
0 20 40 60 80 100 120 140 160 180
f (degrees)
Novel Nystrom Method
Scattering by a very thin diamond:
10
-10
a 0.4 Nystrom
Z MoM
-20 h 0.02
Bistatic RCS (dB)
-30
-40 h
O
-50 Y
-60
a a
-70
X
-80
-90
0 20 40 60 80 100 120 140 160 180
(degrees)
Novel Nystrom Method
Higher-order convergence for ogive scattering:
1
10
HH, rule1
HH, rule2
HH, rule3
0
10 VV, rule1
VV, rule2
RMS Error (dB)
VV, rule3
-1
10
-2
10
-3
10
1
10
Unknowns per wavelength
Novel Nystrom Method
Higher-order convergence for pencil scattering:
1
10
HH, rule1
HH, rule2
HH, rule3
VV, rule1
0
10 VV, rule2
RMS Error (dB)
VV, rule3
-1
10
-2
10
1
10
Unknowns per wavelength
Conclusion
Past progresses:
FEM & ROM modeling of multilayer, distributed feed
network (Cangellaris)
Accurate, broadband antenna/array modeling with
frequency- and time-domain FEM (Jin)
Linear/nonlinear feeds, cable feeds, antenna/platform
interaction, & TDIE/ROM integration (Michielssen)
Full-band MLFMA, loop-basis for VIE, and higher-order
Nystrom method (Chew)
Future work:
Hybridization of FEM and ROM to interface antenna feeds
and feed network
Hybridization of FEM and TDIE (TD-AIM & PWTD) or MLFMA
to model antenna/platform interaction
Parallelization to increase modeling capability