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2012/11/02
Design Procedure Kn=100uA/V2 Kp=40uA/V2
1. VCC=5~6V
2. Ibias=2uA
3. Gain > 60dB
4. Phase Margin > 60deg
5. ICMR=0V~3.75V
6. Vout=0.55V~4.4V
7. CL=2pF
8. GB=2.5MHz
Av gm1 Rout gm1 {[ gm9 ro9 ro11] || [ gm7 ro7 (ro5 // ro 2)]}
1
P1 (rad / s)
Rout CL
I
Vin (max) VCC V SG1, 2VSD3( SAT ) VSD31( SAT ) VCC 3
| VTP1 | VSD3( SAT ) VSD31( SAT )
Kp(W )
1, 2
L
W W 2 8.4 16.8 W
) 6,7
8.4
2 14
( )6 ( )7 7.46 Set (
L L 2
Kn(VDS 6,7 ( SAT ) ) 100(0.15) 2 L 1.2
4. Set I8=I9=I10=I11=6uA*140%=8.4uA in worst condition
2 I 8, 9 W 10.5
W W 16.8 Set ( ) 8, 9 2 10.5
( )8 ( ) 9 2
2
10.5 L 2
L L Kp(VDS 8,9( SAT ) ) 40(0.2)
2 I10,11 W 10.5
W W 16.8 ( )10,11 2 10.5
( )10 ( )11 10.5 L 2
L L Kp(VDS10,11( SAT ) ) 2 40(0.2) 2
5. If GB=2.5MHz gm1 gm2 GB CL (2.5e 6) 2 (2e 12) 31.4(uA / V )
W W gm12 31.4 2 W W 3
( )1 ( ) 2 4.1 Set ( )1 ( ) 2 8 6
L L Kp I 3 40 6 L L 4
W 2 I3 16.8
6. ( )3 10.5 Set (
W
)3
10.5
2 10.5
L Kp(VDS 3( SAT ) ) 2 40(0.2) 2 L 2
VCC 0 5V VINP=0~5.5
Ii1=6uA, 8.4uA, 3.6uA for TT, FF, SS
Test Bench for ICMR
Simulation result in ICMR
TT
FF
SS
VO
TT
FF
SS
Iin
TT
FF
SS
Slope
VCC 0 5V VINP=-0.2~2.7
Ii1=6uA, 8.4uA, 3.6uA for TT, FF, SS Test Bench for Output Swing
Simulation result in output swing (All MOS in SAT)
TT
FF
SS
VO
Slope
VCC 0 5V Test Bench for SR
VINP pwl 0 0, 20u 0, 20.01u 2, 30u 2, 30.01u 3 60u 3, 60.01u 2
Ii1=6uA, 8.4uA, 3.6uA for TT, FF, SS
Simulation result in SR+
TT
FF
SS
VO
TT 2.64V/us
FF 3.72V/us
SS 1.57V/us
Slope
Simulation result in SR-
TT
FF
SS
VO
TT 2.75V/us
FF 3.86V/us
SS 1.64V/us
Slope
VCC 0 5V VINP=0.55V, 2.15V, 3.75V
Ii1=6uA, 8.4uA, 3.6uA for TT, FF, SS
Test Bench for gain and phase margin
TT : Close Loop Gain=78.2dB Simulation result in closed loop simulation (VINP=2.15V)
phase margin =87.4o
P1=315Hz
GB=2.54MHz