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Volume density --
mass/unit cell
Volume density of metal = v =
volume/unit cell
Planar density --
# atom centers intersected
Planar atomic density = p =
selected area of plane
Example: Copper
Data from Table inside front cover of Callister (see previous slide):
• crystal structure = FCC: 4 atoms/unit cell
• atomic weight = 63.55 g/mol (1 amu = 1 g/mol)
• atomic radius R = 0.128 nm (1 nm = 10 -7cm)
a
R=0.5a
close-packed directions
contains 8 x 1/8 =
1 atom/unit cell
Adapted from Fig. 3.19,
Callister 6e.
Lattice constant
• APF for a simple cubic structure = 0.52
ATOMIC PACKING FACTOR: FCC
Point defects
Line defects
Surface Imperfections
PROPERTIES
0D 1D 2D 3D
(Point defects) (Line defects) (Surface / Interface) (Volume defects)
Surface Twins
Vacancy Dislocation
Interphase Precipitate
Impurity
boundary
Faulted
Frenkel Grain
region
defect boundary
Twin Voids /
Schottky
boundary Cracks
defect
Stacking
faults
Vacancy
Tensile Stress
Fields ?
Relative
size
Interstitial
Compressive
Impurity Stress
Fields
Substitutional
Compressive stress
fields
Frenkel defect
50
Types of Diffusion
• Volume diffusion – within the atomistic
site, energy required is high
• Grain Boundary – along the interfaces of
grains, energy required is medium
• Surface diffusion – along the surface,
energy required is low compare to other
above two diffusionprocess.