Chapter 1

Introduction to Power Electronics/

Power Semiconductor Devices
 Learning Outcomes
• At the end of this topic, students should be
able to
1) outline functions and related issues of power
electronics applications,
2) identify power semiconductor devices, and
3) describe the characteristic of power
semiconductor devices and their drive
requirements.

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 Introduction to Power
Electronics (PE)
• PE circuits involve in converting electrical
power from one form to another using
power semiconductor devices.

• The conversion of power can occur in

uncontrollable or controllable manner.

• PE circuits are known as converters.

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 Introduction to Power
Electronics (PE)
Input source:
sensor
Power electronics Output:
-AC Load
converter
-DC -AC
-Unregulated -DC
Signal control

Controller
Reference

Block diagram of power conversion using PE circuits/ converters

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 Goal of PE
• To convert electrical power according to
application demand.

• Power is converted with

– high efficiency,
– high availability,
– high reliability,
– lowest cost,
– smaller size, and
– lightest weight.

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 Application of PE
1. Static application.
– Involving non-rotating mechanical components.
Examples: rectifiers, inverters and etc.
– To convert electrical power for supplying load
demand or for Power Quality (PQ) improvement.

2. Drive application.
– Involving rotating mechanical components.
Examples: AC or DC motor drives.
– To manipulate certain parameter for controlling
the speed of motors.

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 Current Issues Related to PE
1. Energy scenario.
– Increase the use of renewable energy such as
solar and wind energy.
– Reduce the dependency to fossil fuel and
nuclear power.
– Improve PQ and energy saving.

2. Environment issues.
– Nuclear safety  radioactive.
– Air pollution due to fossil fuel combustion.
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 Growth Factors of PE
Application
1. Advances in power semiconductor devices:
capability in handling high voltage or high
current.

2. Advances in controllers: efficiency and

accuracy.

3. Advances in control algorithms: simple and

accurate.
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 PE Converters
Rectifier

AC input DC input

Chopper

DC input DC input

Inverter

DC input AC input

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 Introduction to Power
Semiconductor Devices
• These devices are used in any power
electronic circuits as switches for conducting
electrical current.

• Hence, they also can be called as power

switches.

• Their operation can be either uncontrollable

or controllable.

• A single unit of power switches conducts

current in one direction only.
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Introduction to Power Semiconductor
Devices

http://www.iue.tuwien.ac.at/phd/park/node14.html
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 Ideal Versus Practical Power
Switches
Ideal switch
During off-state Block arbitrarily large
forward voltage and
reverse voltage with zero
current flow.
During on-state Conduct arbitrarily large
forward current with zero
voltage drop.
Switching activity Switch from on-state to
off-state and vice versa
instantaneously.
Gate signal (if Very small power is
any) required from a control
source to trigger the
switch operation.
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Practical switch
Finite blocking forward voltage
and reverse voltage with small
current flow.
Finite forward current flow and
considerable voltage drop.
Require finite time (or time
delay) to reach maximum
voltage and current.
Depending on the type of
power switches, some of them
require small power (such as
IGBT & MOSFET) and some of
them (such as GTO) require
substantial current to trigger 12
 Power Diodes
• The simplest power switches.

• Their operation is uncontrollable and it depends by

voltages and currents.

• When current flow from

anode to cathode, the diode is in https://learn.sparkfun.com/tutorials/diodes

forward-biased (on).

• When current flow form

cathode to anode, the diode is in
reverse-biased (off). http://my.element14.com/fairchild-
semiconductor/1n4148/diode-100v-200ma-do-
35/dp/9843680?MER=bn_browse_1TP_MostPopular_1
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Power Diodes

http://www.electronics-tutorials.ws/diode/diode_4.html
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 Power Diodes
• To increase the reverse blocking capability
= connect several diodes in series.

• To increase higher current conductivity =

connect several diodes in parallel.

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 Power Diodes
• When a diode turns off, the leakage
current in it decreases until negative value
before returning to zero.

• The time taken for the current to become

zero is known as reverse recovery time trr.
The current is known as reverse recovery
current.

• Small trr is important in high frequency

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applications. ABDUL RAHMAN
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Power Diodes

https://www.allaboutcircuits.com/technical-articles/a-review-on-power-
semiconductor-devices/

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 Power Diodes
• Effects of trr :
– Switching losses.
– Voltage ratings.
– Voltage spikes.
– Inductive loads.

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 Power Diodes
Diode trr Voltage & current Application
ratings
General High ≈ 25 High (up to 5 kV, 5 kA) Low switching
purpose s frequency applications
diode such as rectifiers and
line commutated
converters.
Fast- Low < 5 Medium (typically, from 50 High switching
recovery s V to around 3 kV, and from frequency applications
diode less than 1 A to hundreds such as DC-DC and
of amperes. DC-AC converters.
Schottky Very low ≈ Low voltage (around 100 Low voltage and high
diode 0 V) and high current (from current applications
1 A to 400 A) such as DC power
supplies.

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 Power Transistors
• Controllable power switches that operate in the
saturation region.

• Can be turned on and off using relatively very

small control signals; using driver circuits.

• Their voltage and current ratings are lower than

thyristors.

• They are normally used in low- to medium-power

applications.
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 Power Transistors
• 3 common types:
1) Bipolar Junction Transistor (BJT),
2) Metal Oxide Semiconductor Field Effect
Transistor (MOSFET), and
3) Insulated Gate Bipolar Transistor (IGBT).

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 Power Transistors

V-I characteristics of BJTs V-I characteristics of IGBTsV-I characteristics of MOSF

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 Power Transistors (BJTs)
• They operate as current controlled devices.

C (Collector) C (Collector)

IC
IC
+ -
IB IB
VCE VCE
B B
(Base) - (Base) +

E (emitter) E (emitter)
NPN PNP

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 Power Transistors (BJTs)

http://www.electronics-
tutorials.ws/transistor/tran_2.html
V-I characteristics of BJTs
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 Power Transistors (BJTs)
• Ratings:
– Voltage: VCE < 1500 V.
– Current: IC < 600 A.
– Switching frequency up to 5 kHz.
– Low on-state voltage: VCE(sat): 2 – 3 V.

• Switching operation:
– Turn-on = inject + or - IB for NPN or PNP base
terminal.
– Turn-off = remove IB.

• Not popular in new products.

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 Power Transistors (BJTs)
• Advantage:
– Low on-state voltage.

• Disadvantages:
– Low current gain  = IC / IB which is commonly
less than 10.
• We can use darlington pair to increase .

– Long turn off time.

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 Power Transistors (BJTs)
• Darlington pair C

Ic1 IC

Driver IC2
Transistor
IB1 (Q2) Output
B Transistor
+ (Q1)
IB2
Vce
G
(Gate) -

Biasing/ stabilising
network
E

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 Power Transistors (MOSFETS)
• They operate as voltage controlled devices.

D (Drain) D (Drain)

ID
ID
+ -
VDS VDS
G + - G - +
(Gate) VGS (Gate) VGS
- +

http://my.element14.com/fairchild-
semiconductor/rfp30n06le/mosfet-n-
S (Source) S (Source)
logic-to-
n-channel p-channel
220/dp/1017798?ost=RFP30N06LE&sele
ctedCategoryId=&categoryNameResp=Al
l&searchView=table&iscrfnonsku=false

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Power Transistors (MOSFETS)

http://www.electronics-tutorials.ws/transistor/tran_7.html

V-I characteristics of MOSFETs

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 Power Transistors (MOSFETS)
• Ratings:
– Voltage: VDS <500 V.
– Current: IDS <300 A.
– Switching frequency (>100 kHz).
– High on-state voltage drop.

• Switching operation:
– Turn-on = apply VGS +15 V.
– Turn-off = apply VGS 0 V.

• Commonly for low voltage applications.

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 Power Transistors (MOSFETS)
• Advantages of MOSFETs over BJTs:
– Simpler gate drive requirement.
– Higher switching frequency.
– Higher positive temperature coefficient.
– Higher gain.
– No second breakdown phenomena.

• Disadvantages:
– Has electrostatic discharge problem.
– Has internal resistance between drain and source
during on-state, RDS(ON).
– Low voltage and current ratings.
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 Power Transistors (IGBTs)
• They inherit the advantages of BJTs and
MOSFETs.
– Voltage controlled devices (like MOSFETs)
– High input impedance (like MOSFETs).
– Easy to turn on and off (like MOSFETs).
– Low on-state conduction losses (like BJTs).

http://www.newtoncbraga.com/index.php/article
s/16-how-they-work/347-isolated-gate-bipolar-
transistor-igbt-art112

http://my.element14.com/infineon/irg4bc40fpbf/igbt-to-
220/dp/9105018
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 Power Transistors (IGBTs)
• However, the performance of the IGBT is
closer to a BJT than an MOSFET.

• Very popular in new products.

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Power Transistors (IGBTs)

V-I characteristics of IGBTs

http://protorit.blogspot.my/2013/02/insulated-gate-bipolar-
transistor-igbt.html

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 Power Transistors (IGBTs)
• Ratings:
– Voltage: VCE <3.3 kV.
– Current: IC <1.2 kA.
– Switching frequency up to 100 kHz (typically used
at 20 – 50 kHz).
– Low on-state voltage: VCE(sat): 2 – 3 V.

• Switching operation:
– Turn-on = apply +VGE.
– Turn-off = apply VGE 0 V.
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 Power Transistors
• Comparison Power BJT IGBT Power MOSFET
between
BJTs,

Increasing gate voltage

Increasing base current

MOSFETs &
Ids
Ice
IGBTs:
– Steady-state
characteristic
s:
Vth Vce
Vds

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 Power Transistors
– Dynamic-state characteristic.

Turn-on Turn-off
Ids
Ice

Power BJT

IGBT
Power MOSFET

time

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 Thyristors
• Also known as Silicon
Controlled Rectifier (SCR).

• They require gate signal to

turn-on during the forward-
biased). The gate signal is http://electronicspost.com/draw-and-
explain-the-v-i-characteristics-of-an-
not required after the scr/

conduction starts.

• However, they do not have

gate controlled turn-off http://my.element14.com/on-
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220/dp/9557202
Thyristors

V-I characteristics of thyristors

http://electronicspost.com/draw-and-explain-the-v-i-characteristics-
of-an-scr/
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 Thyristors
• Once turn-on, they will conduct current until
the anode current remains positive and
higher than the holding value.

• They will turn-off when the anode current

becomes
negative (reverse-biased) due to
– natural commutation,
– forced commutation using external
circuitary, or
– supply voltage ABDUL
cutoff.
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 Thyristors
• Advantages of thyristors:
– High power handling capability.
– High voltage and current ratings.
– High current conductivity.
– High blocking voltage.
– High gain.
– Very low on-state resistance.

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 Thyristors
• The regenerative or latching action of thyristors
can be demonstrated using two-transistor model of
thyristor.

http://www.eng.uwi.tt/depts/elec/staff/rdefour/ee33d/s4_model.ht
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 Thyristors
• Consider a single transistor: C (Collector)

IC
– IC is related to IE and ICBO as
IB

---(1)
B
(Base)
IE
where
E (emitter)
NPN

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 Thyristors
• For Q1, eqn. (1) becomes
---(2)

• For Q2, eqn. (1) becomes

---(3)

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 Thyristors
• The sum of IC1 and IC2 yields IA.

---(4)

• When gate current IG is applied to the

thyristor (forward biased),
---(5)

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 Thyristors
• Eqn. (5)  eqn. (4). The result is
---(6)

• Typical variation of 
with IE.
--- For Q1

--- For Q2

http://www.eng.uwi.tt/depts/elec/staff/rdefour/ee33d/s4_model.ht
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 Thyristors
• If the gate current IG is increased from 0 to some positive value, this will
increase the anode current IA as shown in (6).

• An increase of IA will increase IE1 and subsequently increase 1 shown

in the graph  vs IE.

• According to (5), the increase of 1 will also increase 2.

• The increase values of both 1 and 2 would further increase the value
of IA.

• This process is known as regenerative/ positive/ latching action.

• If 1 and 2 approach unity, the denominator of (6) approaches 0 and

large value of IA is produced and causing the thyristor to turn on as a
result of the application of a small IG.
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 Thyristors
Thyristor Conducti Gate Gate controlled Application
on controlled turn-off
turn-on
Phase 1 Yes No Low switching
control direction frequency
thyristor applications
(SCR) such as AC and
DC motor drives.
Fast 1 Yes No (but it has High switching
switching direction fast turn-off time frequency
thyristor which is 5 - 50 applications
(SCR) s) such as
inverters and
choppers.
Light 1 Yes (in a form No Used in high
Activated direction of direct voltage and high
Silicon radiation/ pulse current
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 Thyristors
Thyristor Conducti Gate Gate controlled Application
on controlled turn-off
turn-on
Bidirectional 2 Yes No For low power
Triode directions applications
Thyristor (each such as AC
(TRIAC) antiparall phase control.
el
thyristor
conducts
at
opposite
direction
Gate Turn- 1 Yes Yes (by For low and fast
Off Thyristor direction applying switching
(GTO) negative gate applications.
signal)
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 Thyristors
• Advantages of GTOs:
– Eliminate commutating component in force
commutation.
– Faster turn-off time.
– Improve a converter efficiency.

• Disadvantages of GTOs:
– Has low gain during turn-off: high negative gating
signal.
– Has higher on-state voltage than SCRs.
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 Types of Power Semiconductor
Devices
Power V-I Characteristic
switch
Diode Passes current in one direction and blocks in the other direction.
BJT Passes or blocks current in one direction.
MOSFET Passes or blocks current in one direction.
IGBT Passes or blocks current in one direction.
Thyristor Passes current in one direction or blocks in both directions.

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 Pulse Transformers
• It has one primary winding and
one or more secondary
windings.
• It transfers signal in a form of
pulse.
http://www.directindustry.com/prod
• It provides isolation between /murata-power-solutions/product-
101149-927585.html

controller circuit and power

circuit.
• It does not work with DC or pure
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 Optocouplers
• It allows two circuits to exchange signal yet remain
electrical isolated.
• It can transfer DC signal, square pulse at a very
high speed.
• Standard circuit is using LED.

http://usources.manufacturer.globalsources.com/si/60088000617
42/pdtl/Microcontroller/1123509615/Optocouplers.htm

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 Drive Circuits
• They act as interface between control
circuits and power switches.

• They amplify a control signal to a level

required to drive power switches,

• They also provide electrical isolation

between control circuits and power
switches; for protection.
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 Power Losses in Power Switching
Devices
• The importance of power switch losses:
– To ensure system reliability.
– To specify an appropriate heat remover
mechanism.
– To improve an efficiency of the system.

• Main losses:
1. Forward conduction losses.
2. Blocking state losses.
3. Switching losses.
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Switching Losses

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Summary of Device Capabilities

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 Power Electronics Devices Applications

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