CTM

 Bipolar mean has two polarities.

Manufactured as npn or pnp devices.
 Usually called transistor only.

 Has 3 doped region : emitter (bottom

region/heavily doped), base (middle
region/lightly doped) and collector (the top
region/intermediate doped)
Collector-base juntion
(collector diode)

Emitter- base juntion

(emitter diode)
 As we know that free electron in n region
Will Diffuse across the junction and
recombine with holes in p region.

The result is 2 depletion layer (has BP) in fig 2.

Fig 1. NPN transistor before difussion

fig 2. Depletion layer

 Unbiased Transistor is like 2 back-to-back
diode. It has 2 junction : one between emitter
and base (lower diode, usually called emitter
diode), another between collector and base
(upper diode, usually called collector diode).

 In actual transistor base region is much

thinner compared to collector and emitter
 If An unbiased transistor connected to
external voltage source, so we can get
currents through the different parts of
transistor.
 Emitter acts as free electron injector into base
 Base acts to pass emitter-injected electron to
the collector
 Collector as its name is work to collect most
of the electron from base.
𝑉𝐵𝐵 : Voltage source to Forward Biased emitter diode

𝑉𝑐𝑐 : Voltage source to Reverse Biased collector diode

If 𝑉𝐵𝐵 ≫ 𝑉𝐵𝐸 , 𝑒𝑚𝑖𝑡𝑡𝑒𝑟 𝑒𝑙𝑒𝑐𝑡𝑟𝑜𝑛 𝑤𝑖𝑙𝑙 𝑒𝑛𝑡𝑒𝑟 𝑏𝑎𝑠𝑒 𝑟𝑒𝑔𝑖𝑜𝑛

Fig 3. Biased transistor

If 𝑉𝐵𝐵 ≫ 𝑉𝐵𝐸 , 𝑒𝑚𝑖𝑡𝑡𝑒𝑟 𝑒𝑙𝑒𝑐𝑡𝑟𝑜𝑛 𝑤𝑖𝑙𝑙 𝑒𝑛𝑡𝑒𝑟 𝑏𝑎𝑠𝑒 𝑟𝑒𝑔𝑖𝑜𝑛

Fig 4. Emiter injects free electron into base

Fig 4. free electron from base flow into collector

 𝑉𝐵𝐵 Forward biased the emitter diode, forcing
the free electron in the emitter enter the
base.
 The thin and lightly doped base gives almost
all these electrons enough time to diffuse
into the collector.
 These electrons flow through the collector,
through 𝑅𝑐 into the positive terminal of the
𝑉𝐶𝐶 voltage source.
  Using KCL 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 since 𝐼𝐵 is so small, so
𝐼𝐸 ≈ 𝐼𝐶 and 𝐼𝐵 ≪ 𝐼𝐶 (base current is much
smaller than collector).

𝑰𝑩 𝑰𝑪 𝑰𝑩
𝑰𝑩 𝑰𝑪 𝑰𝑪

𝑰𝑬
𝑰𝑬 𝑰𝑬

𝒄𝒐𝒗𝒆𝒏𝒕𝒊𝒐𝒏𝒂𝒍 𝒄𝒖𝒓𝒓𝒆𝒏𝒕 𝒇𝒍𝒐𝒘 E𝒍𝒆𝒄𝒕𝒓𝒐𝒏𝒔 𝒇𝒍𝒐𝒘 𝑷𝑵𝑷 𝒄𝒖𝒓𝒓𝒆𝒏𝒕𝒔

 Define as DC collector current divided by the
DC emitter current :
𝐼𝐶
 𝛼𝑑𝑐 =
𝐼𝐸
 Since 𝐼𝐸 ≈ 𝐼𝐶 , so 𝜶𝒅𝒄 slightly less than 1 (for
low-power transistor typically greater than
0.99 and for high- power transistor 𝜶𝒅𝒄 is
typically greater than 0.95
 Also known as current gain
𝐼𝐶
 𝛽𝑑𝑐 =
𝐼𝐵
 Transistor haa a collector current 10 mA,
base current 40µA. What is the current gain
of the transistor?
𝐼𝐶 10𝑚𝐴
 𝛽𝑑𝑐 = = = 250
𝐼𝐵 40𝑢𝐴