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(An Introduction)
무니르
Outline
Introduction
Basic Aspects
Properties of lights
Structure of materials
Electrical properties of semiconductor
Optical properties of semiconductor
Light Detection and Imaging
Photo-detectors
Charged Couple Devices (CCD)
Fiber optic
Optoelectronics?
Laser Diodes
Light Emitting Diodes (LED)
Optical Detectors
Display Devices
Solar Cells
etc….
Basic question:
Current
(Electron)
Other type
of energy
semiconductor Applications
Lights ~ free energy source
Properties of Light
Propagation (can be guided..)
Polarization (can be twisted..)
Interference
Diffraction
Radiation
Properties of Light
Color lo (nm) f (Hz) Ephoton (eV)
Solids
Crystalline: periodicity, Long Range Order (LRO)
Polycrystalline: LRO several microns
Amorphous: good SRO, no LRO
Liquid and Gaseous
No ordering
Can flow and take the container’s shape
Liquid Crystal (Organic)
LRO
Flow of atoms/molecules
Has both properties of solid crystalline and liquid
Solid matters
Crystalline
Periodicity: 14 Bravais lattices
Most electronic materials are FCC and only few HCP
Imperfections
Point defects: Vacancy, Interstitial, Substitution
Dislocations
Planar (Volume) defect
Solid matters
Polycrystalline
Grain size ~ 1 microns
Amorphous
Dangling bonds
Passivation by H
Conduction properties of solid
Electron has energy levels
Energy Band gap
Direct and Indirect band gap
GaAs Si
Si Si Si Si Si Si Si
free
electro
Si Si Si Si Si Si Si n
free
hole
Si Si Si Si Si Si Si
Photons
Optical Generation of Free Electrons and Holes ~
Band Model
“Conduction Band”
(Nearly) Empty
Electron Energy
“Forbidden” Energy
Gap
“Valence Band”
(Nearly) Filled with Electrons
If a photon has an energy larger than the energy gap, the photon will be absorbed
by the semiconductor, exciting an electron from the valence band into the
conduction band, where it is free to move.
A free hole is left behind in the valence band.
This absorption process underlies the operation of photoconductive light detectors,
photodiodes, photovoltaic (solar) cells, and solid state camera “chips”.
Intrinsic and Extrinsic Semiconductors
Ex. Silicon
N-type (P-doped) P-type (B-doped)
Carrier Generations and Recombinations
Through electron – hole pairs mechanism
Transport scattering may occurs from various imperfections in
the crystal
Conduction Band
Valence Band
at thermal equilibrium Under optical illumination
Semiconductor (p-n) junction
Spontaneous emission
Even requires NO incident photon
Incoherent emission
Example : LED
Stimulated emission
Requires sufficient incident photon
Coherent emission
Example : Laser diode
Radiative recombination
“Electron-hole pairs” from charge injection (from light or external battery)
Gain: (Emission - Absorption)
An optical beam will grow as a result of positive gain
Non-radiative recombination
When recombination produces ‘heat’ or ‘phonon’
Color Imaging (Phosphors and Fluorescence)
Light emission can also be occurred after excitation
Organic and Inorganic materials with impurities emit different
light colors
Introduction
Basic Aspects
Properties of lights
Structure of materials
Electrical properties of semiconductor
Optical properties of semiconductor
Light Detection and Imaging
Photodetectors
Charged Couple Devices (CCD)
Photoconductive Light Detectors
hf
semi-
conductor I Vo
ut
Metal – Semiconductor
(Schottky detector)
MOS
Charge-Coupled Device (CCD)
Resolutions
Denoted in ‘Pixels’
Related to the number and
form of detectors
Device ~ 4 million pixels
Human eye ~ 120 million pixels
New FUJI
super CCD
Outline
Introduction
Basic Aspects
Properties of lights
Structure of materials
Electrical properties of semiconductor
Optical properties of semiconductor
Light Detection and Imaging
Photodetectors
Charged Couple Devices (CCD)
Concluding remarks: