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Manufacturing Technology
Michael Quirk & Julian Serda
© October 2001 by Prentice Hall
Chapter 10
Oxidation
Wafer start
Thin Films Polish
Unpatterned
wafer
Completed wafer Diffusion Photo Etch
Test/Sort Implant
Silicon Oxygen
n-well p-well
p- Epitaxial layer
p+ Silicon substrate
Polysilicon gate
Gate Oxide
n-well p-well
p- Epitaxial layer
p+ Silicon substrate
Phosphorus implant
Barrier oxide
n-well
p- Epitaxial layer
p+ Silicon substrate
p+ Silicon substrate
Field oxide
Transistor site
p+ Silicon substrate
Source Drain
Transistor site
p+ Silicon substrate
Barrier oxide
Metal
Diffused resistors
p+ Silicon substrate
Dopant barrier
spacer oxide Ion implantation
Gate
ILD-5
M-4
ILD-4
M-3
p+ Silicon substrate
Interlayer oxide
Passivation layer
Bonding pad metal
ILD-5
M-4
ILD-4
M-3
1.0
Oxide thickness (m)
0.1
0.01
10 102 103 104
Time (minutes)
Exhaust
Scrubber
HCl N2 O2 H2
t 0.55t
0.45t
Silicon Oxygen
SiO2
Positive charge
Silicon
Oxygen supplied to
reaction surface
O, O2
Oxygen-oxide
interface
SiO2
Oxide-silicon
interface
Si
4,000 Å
Oxidation thickness
3,000 Å
2,000 Å
1,000 Å
Approximate linear region
}
100 200 300 400 500
Oxidation time (minutes)
Used with permission from International SEMATECH
Semiconductor Manufacturing Technology Figure 10.12 © 2001 by Prentice Hall
by Michael Quirk and Julian Serda
LOCOS Process
Silicon oxynitride
Bird’s beak region
Nitride oxidation mask
Selective oxidation
Silicon dioxide
Pad oxide
Silicon substrate
Pad oxide
(initial oxide)
Silicon
• Horizontal Furnace
• Vertical Furnace
• Rapid Thermal Processor (RTP)
Quartz boat
Process gas
cylinder
Pressure Exhaust
controller
Heating jacket
Three-zone
heating
elements
Quartz tube
End cap
Heater element
transformer
Thermocouple measurements
System Temperature
controller controller
Overtemperature TCs
Profile TCs
Control TCs
Heater 1
Heater 2
Heater 3
TC
To facility’s
exhaust system
Wet
scrubber
Combustion chamber
(burn box or flow Filter
reactor)
O
2
O
Gas from furnace
2
process chamber
Residue
Recirculated
water
Used with permission from International SEMATECH
1200 1200
1000 1000
Temperature (°C)
Temperature (°C)
800 800
600 600
400 400
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
Time (minutes) Time (minutes)
Setpoint voltages
Heater head
Feedback voltages
Photograph courtesy of Advanced Micro Devices, Applied Materials 5300 Centura RTP
Process Gas
Time Temp N2
N2 O2 HCl
Step Purge Comments
(min) (ºC) Gas (slm) (slm) (sccm)
(slm)
0 850 8.0 0 0 0 Idle condition
1 5 850 8.0 0 0 Load furnace tube
Ramp Ramp temperature up
2 7.5 8.0 0 0
20ºC/min
Temperature
3 5 1000 8.0 0 0
stabilization
4 30 1000 0 2.5 67 Dry oxidation
5 30 1000 8.0 0 0 Anneal
Ramp Ramp temperature
6 30 8.0 0 0 down
-5ºC/min
7 5 850 8.0 0 0 Unload furnace tube
8 850 8.0 0 0 0 Idle
Note: gas flow units are slm (standard liters per minute) and sccm (standard cubic centimeters per minute)
75 Production
wafers
1 Test wafer
75 Production
wafers
1 Test wafer
4 Filler (dummy) wafers
1
Used with permission from International SEMATECH
Semiconductor Manufacturing Technology Figure 10.24 © 2001 by Prentice Hall
by Michael Quirk and Julian Serda
Chapter 10 Review