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Semiconductors
Group Members
G B
S
NMOS Structure
The NMOS is fabricated on a p-type substance, which is a single-crystal silicon wafer
that provides physical support for the device.
Two heavily doped n-type regions, are created in the substrate, indicated in the figure as:
n+ Source (‘S’)
n+ Drain (‘D’)
A layer of Silicon Dioxide (SiO2) which is good insulator with thickness
is placed on the top of the substrate. Gate
Body Source Drain
G
The Gate is heavily doped material B S D
IG=0
called polysilicon(Poly).
L is the length between the Source(S) ID=IS
IS
and Drain(D). Metal
oxide
The Body(B) of NMOS is connected to the
n+ n+
lowest voltage. L W
P-Substrate
NMOS Physical Structure
Cross-Section. Typically L = 0.1 to 3 mm, W = 0.2 to 100 mm, and the thickness of the oxide layer (tox)
is in the range of 2 to 50 nm.
NMOS V-I Characteristics
Basically we have two regions: the Triode/Linear region at smaller VDS and the saturation region
at higher VDS but Cut-Off and Deeply Triode regions also occurs in NMOS.
ID=Drain Current , IDS=Drain Source Current , VDS=Drain Source Voltage , VGS=Gage Source Voltage
If the gate voltage is above threshold, but the source to drain voltage is small,
the charge under the gate is uniform, and carries current much like a resistor.
We call the boundary between the regions VDSat.
ID
VGS > VTH AND VDS < VGS - VTH Linear/Triode Region VGS
- + gate
drai
sourc n
e oxide insulator
n n
P
VDS
VDSat
Linear / Triode Region
Gate
If VGS > VTH and VDS < VGS - VTH , then Source
G
Body Drain
S IG=0
B D
ID = kn {2( VGS – VTH )VDS – VDS . VDS } I ID=IS
S
Here Kn is the conduction parameter.
Metal
oxide
kn = µn Cox W/2L n+ L n+ W
P-Substrate
µn = Electron Mobility in the channel
Cox = The Capacitance of Silicon Diode
W = Width of channel
When the voltage from the source to the drain gets high enough, the channel
gets “pinched” In the pinch region.
The carriers move very fast, but the current is determined by the triangular
region, which does not change much as the drain voltage is changed, so the
current saturates. Saturation Region
ID
We call the boundary between the regions VDSat. VGS
- + gate
drain
sourc
e oxide insulator
n n
P
VDS
VDSat
Saturation Region
kn = µn Cox W/2L
𝑉 TH = Thresh Voltage
Muhammad Zeeshan
Cut-off Region Region
RON = 𝑉DS / 𝐼 D
When the voltage applied between drain and source, VDS, is kept very small. The device operates as a
linear resistor whose value is controlled by VGS.
Ahmad Sarvar
Impacts of length and Width on NMOS
Gate Length
The gate length, L, is the distance the electrons have to travel. It is generally set at the
minimum value (e.g. .18 micron) for nearly all logic transistors
As the gate length gets shorter, the gate capacitance gets smaller
As the gate length gets shorter, Gate
Body Source G Drain
the current drive of the transistor B S IG=0 D
also gets larger.
ID=IS
However, leakage current also increases. IS
Metal
oxide
n+ n+
L W
P-Substrate
Impacts of length and Width on NMOS
Gate Width
The gate width, W, is determined by the circuit designer.
One uses a wider gate to get more current (and thus charge a capacitor faster).
For example doubling W is the same
Gate
as putting two equal-sized transistors Body Source G Drain
B S IG=0 D
in parallel, and thus doubles the current
at any given voltage. ID=IS
IS
Metal
oxide
n+ n+
L W
P-Substrate
Purpose of NMOS
NMOS PMOS
In a PMOS free charges which move from end-
An NMOS the n-type semiconductor, so the
charges free to move along the channel are to-end are positively charged (holes).
negatively charged (electrons). In this device the gate controls hole flow from
In this device the gate controls electron flow source to drain.
from source to drain.
gate
source N-MOS drain source P-MOS drain
oxide insulator
n n p p
P n-type Si
Comparison of NMOS with PMOS
NMOS PMOS
D S
G B G B
S
D
NMOS-Circuit PMOS-Circuit
Comparison of NMOS with PMOS
NMOS PMOS
“Body” – p-type “Body” – n-type
Source – n-type Source – p-type
Drain – n-type Drain – p-type
VGS – positive VGS – negative
VT – positive VT – negative
VDS – positive VDS – negative
ID – positive (into drain) ID – negative (into drain)
VDS VDS
2 4 1 2 3 4
1 3
Mohsin Ali
Summary
NMOS
NMOS is the four terminal electronic device. It is a type of semiconductor that
charges negatively. So that transistors are turned ON/OFF by the movement of
electrons.
Working
NMOS is works on the basis of G’s value it is used in CMOS as a inverter.
Regions
NMOS have four regions. Which are:
1. Linear / Triode Region
2. Saturation Region
3. Cut-off Region
4. As Resistor Region
Summary
VGS > VTH and VDS < VGS − VTH : The Linear Region
The second mode of operation is the linear region when VGS > VTH and
VDS < VGS − VTH. Where the current remains uniform.
VGS > VTH and VDS > VGS − Vt: The Saturation Mode
The saturation mode occurs when VGS > VTH and VDS > VGS − VTH. In this mode the
switch is on and conducting, however since drain voltage is higher than the gate
voltage, part of the channel is turned off.
NMOS As Resistor
If VDS is very small then NMOS works as Resistor.
RON = 𝑉 DS / 𝐼 D
RON = 1 / kn( VGS – VTH )
Any Question !!!!
Thanks!