Silicon Diode Array Vidicon

This is another variation of vidicon where the

target is prepared from a thin n-type silicon
wafer instead of deposited layers on the glass
faceplate. The final result is an array of
silicon photodiodes for the target plate.
Figure shows constructional details of such a
target. As shown there, one side of the
substrate (n-type silicon) is oxidized to form a
film of silicon dioxide (SiO 2 ) which is an
insulator.
Then by photo masking and etching processes, an array of fine openings
is made in the oxide layer. These openings are used as a diffusion mask
for producing corresponding number of individual photodiodes.

Boron, as a dopant is vaporized through the array of holes, forming

islands of p-type silicon on one side of the n-type silicon substrate.
Finally a very thin layer of gold is deposited on each p-type opening to
form contacts for signal output.

The other side of the substrate is given an antireflection coating. The

resulting p-n photodiodes are about 8 μm in diameter. The silicon
target plate thus formed is typically 0.003 cm thick, 1.5 cm square
having an array of 540 × 540 photodiodes. This target plate is
mounted in a vidicon type of camera tube.
 Scanning and Operation
The photodiodes are reverse biased by applying +10 V or
so to the n + layer on the substrate. This side is illuminated
by the light focused on to it from the image. The incidence
of light generates electron-hole pairs in the substrate.
Under influence of the applied electric field, holes are
swept over to the ‘p’ side of the depletion region thus
reducing reverse bias on the diodes.
This process continues to produce storage action till
the scanning beam of electron gun scans the
photodiode side of the substrate. The scanning
beam deposits electrons on the p-side thus
returning the diodes to their original reverse bias.

The consequent sudden increase in current across each

diode caused by the scanning beam represents the video
signal. The current flows through a load resistance in the
battery circuit and develops a video signal proportional to
the intensity of light falling on the array of photodiodes.
A typical value of peak signal current is 7 μA for bright
white light. The vidicon employing such a multi diode
silicon target is less susceptible to damage or burns due to
excessive high lights. It also has low lag time and high
sensitivity to visible light which can be extended to the
infrared region.

A particular make of such a vidicon has the trade name of

‘Epicon’. Such camera tub es have wide applications in
industrial, educational and CCTV (closed circuit television)
services.
The operation of solid state image scanners is based on the
functioning of charge coupled devices (CCDs) which is a new
concept in metal-oxide-semiconductor (MOS) circuitry. The CCD
may be thought of to be a shift register formed by a string of very
closely spaced MOS capacitors. It can store and transfer analog
charge signals—either electrons or holes—that
may be introduced electrically or optically.
The scanning systems so far proposed for solid-state
image pickup devices may be classified into two types.
One type is based on the combination of a photodiode
matrix and tapped delay circuits connected to a pulse
source, while the other type comprises a combination
of a photodiode array and a bleeder coupled to a
scanning saw tooth voltage source. In the former, a
great number of active and passive circuit elements are
required, with the result that the device is complicated
in structure and difficult and costly to manufacture, and
has the further undesirable characteristics of
insufficient reliability and low useful life.
The constructional details and the manner in which
storing and transferring of charge occurs is illustrated in
Figure The chip consists of a p-type substrate, the one side
of which is oxidized to form a film of silicon dioxide, which
is an insulator. Then by photolithographic processes,
similar to those used in miniature integrated circuits an
array of metal electrodes, known as gates, are deposited
on the insulator film. This results in the creation of a very
large number of tiny MOS capacitors on the entire surface
of the chip.
The application of small positive potentials to the gate
electrodes results in the development of depletion
regions just below them. These are called potential wells.
The depth of each well (depletion region) varies with the
magnitude of the applied potential. As shown in Fig. 6.12
(a), the gate electrodes operate in groups of three, with
every third electrode connected to a common conductor.
The spots under them serve as light sensitive elements.
When any image is focused onto the silicon chip,
electrons are generated within it, but very close to the
surface. The number of electrons depends on the
intensity of incident light. Once produced they collect in
the nearby potential wells. As a result the pattern of
collected charges represents the optical image.