Devices, Circuits, and Applications: Thyristors

POWER ELECTRONICS
Devices, Circuits, and Applications

FOURTH EDITION
CHAPTER
CHAPTER 9
Thyristors
Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Learning Outcomes After completing this chapter, students should be able to do the
following:
List the different types of thyristors.
Describe the turn-on and turn-off characteristics of thyristors.
Describe the two-transistor model of thyristors.
Explain the limitations of thyristors as switches.
Describe the gate characteristics and control requirements of different types of thyristors and
their models.
Apply the thyristor SPICE models.
Symbols and Their Meanings
Figure 9.1 Thyristor symbol and three pn-junctions.
Figure 9.2 Cross section of a thyristor.
Figure 9.3 Thyristor circuit and ν–i characteristics.
Figure 9.4 Two-transistor model of thyristor.
Equations 9.2 and 9.3 Two-transistor Model of Thyristor
• For transistor Q1, the emitter current is

the anode current IA, and the collector
current IC1 can be found from Eq. (9.1):
• For transistor Q2, the collector current IC2

is
Equations 9.4 and 9.5 Two-transistor Model of Thyristor
• By combining IC1 and IC2, we get
• For a gating current of IG, IK = IA + IG and

solving Eq. (9.4) for IA gives
Figure 9.5 Typical variation of current gain with emitter current.
Figure 9.6 Two-transistor transient model of thyristor.
Equation 9.6 Two-transistor Transient Model of Thyristor
• The current through capacitor Cj2 can be

expressed as
Figure 9.7 Effects of gate current on forward blocking voltage.
Figure 9.8 Turn-on characteristics.
Figure 9.9 Turn-off characteristics.
Figure 9.10 Amplifying gate thyristor.
Figure 9.11 Bidirectional phase-controlled thyristor. [Ref. 5]
Figure 9.12 Fast-switching thyristors. (Courtesy of Powerex, Inc.)
Figure 9.13 Characteristics of a TRIAC.
Figure 9.14 Reverse-conducting thyristor.
Figure 9.15 Gate turn-off (GTO) thyristor.
Figure 9.16 Typical GTO turn-on and turn-off pulses. [Ref. 8]
Figure 9.17 A GTO turn-off curcuit. [Ref. 8]
Figure 9.18 A 200-V, 160-A GTO. (Image courtesy of Vishay Intertechnology, Inc.)
Figure 9.19 Junctions of 160-A GTO in Figure 9.18. (Image courtesy of Vishay Intertechnology, Inc.)
Figure 9.20 Schematic cross section of the SiC GTO thyristor [59].
Figure 9.21 FET-controlled thyristor.
Figure 9.22 MOS turn-off (MTO) thyristor.
Figure 9.23 Emitter turn-off (ETO) thyristor. [Ref. 22, Y. Li]
Figure 9.24 p-type SiC ETO [62]
Figure 9.25 Cross section of IGCT with a reverse diode.
Figure 9.26 Schematic and equivalent circuit for p-channel MCTs.
Figure 9.27 Cross section and equivalent circuit of a SITH. [Ref. 49, J. Wang]
Table 9.1 Comparisons of Different Thyristors
Table 9.1 (continued) Comparisons of Different Thyristors
Figure 9.28 Thyristor current waveform.
Figure 9.29 Off-state characteristics of two thyristors.
Figure 9.30 Three series-connected thyristors.
Figure 9.31 Forward leakage currents with equal voltage sharing.
Figure 9.32 Reverse recovery time and voltage sharing.
Equations 9.11 and 9.12 Reverse Recovery Time and Voltage Sharing
• Substituting Eq. (9.10) into Eq. (9.8)

yields
• The worst-case transient voltage sharing

that occurs when Q1 = 0 and ΔQ = Q2 is
Equation 9.13 Reverse Recovery Time and Voltage Sharing
• A derating factor that is normally used to

increase the reliability of the string is
defined as
Figure 9.33 Current sharing of thyristors.
Figure 9.34 Thyristor switching circuit with di/dt limiting inductors.
Equation 9.14 di/dt limiting inductors
• The forward di/dt is
Figure 9.35 dv/dt protection circuits.
Equations 9.15 and 9.16 dv/dt protection circuits
• The circuit dv/dt can be found

approximately from
• The value of Rs is found from the

discharge current ITD.
Equations 9.17 and 9.18 dv/dt protection circuits
• The dv/dt is limited by R1 and Cs. (R1 +

R2) limits the discharging current such
that
• From Eqs. (2.40) and (2.41), the

damping ratio δ of a second-order
equation is
Figure 9.36 SPICE thyristor model.
Figure 9.37 Complete proposed silicon-controlled rectifier model. [Ref. 4, F. Gracia]
Figure 9.38 Four-transistor GTO model. [Ref. 12, M. El-Amia]
Figure 9.39 MCT model. [Ref. 37, S. Yuvarajan]
Figure 9.40 Cross section of DIAC and its symbols.
Figure 9.41 ν–i characteristics of DIACs.
Figure 9.42 Voltage and current waveforms of a DIAC circuit.
Figure 9.43 DIAC for triggering a TRIAC.
Figure 9.44 Photo-SCR coupled isolator.
Figure 9.45 Pulse transformer isolation.
Figure 9.46 Gate protection circuits.
Figure 9.47 UJT triggering circuit.
Equations 9.23 and 9.24 Unijunction Transistor
• The period of oscillation, T, is fairly

independent of the dc supply voltage Vs,
and is given by
• If the load line fails to pass to the right of

the peak point, the UJT cannot turn on.
This condition can be satisfied if
• At the valley point IE = IV and VE = Vv so

that the condition for the lower limit on R
to ensure turning off is
• Vp is given by
• The width tg of triggering pulse is
• Resistor RB2 has a value of 100 Ω or

greater and can be determined
approximately from
Figure 9.48 PUT triggering circuit.
Equations 9.29 and 9.30 Programmable Unijunction Transistor
• Vp is given by
• which gives the intrinsic ratio as
Equation 9.31 Programmable Unijunction Transistor
• The period of oscillation T is given

approximately by
Equations 9.33 and 9.34 Programmable Unijunction Transistor
• RG = R1 R2/(R1 + R2). R1 and R2 can be

found from

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POWER ELECTRONICS

Devices, Circuits, and Applications

• For transistor Q1, the emitter current is

• For transistor Q2, the collector current IC2

• By combining IC1 and IC2, we get

• For a gating current of IG, IK = IA + IG and

• The current through capacitor Cj2 can be

• Substituting Eq. (9.10) into Eq. (9.8)

• The worst-case transient voltage sharing

• A derating factor that is normally used to

• The forward di/dt is

• The circuit dv/dt can be found

• The value of Rs is found from the

• The dv/dt is limited by R1 and Cs. (R1 +

• From Eqs. (2.40) and (2.41), the

• The period of oscillation, T, is fairly

• If the load line fails to pass to the right of

• At the valley point IE = IV and VE = Vv so

• The width tg of triggering pulse is

• Resistor RB2 has a value of 100 Ω or

• which gives the intrinsic ratio as

• The period of oscillation T is given

• RG = R1 R2/(R1 + R2). R1 and R2 can be

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