Lenght of Diffusion(LOD)

&
Shallow Trench Isolation(STI)
 Diffusion Length
● Diffusion length is the average length a carrier
moves between generation and recombination.
● Semiconductor materials that are heavily doped have
greater recombination rates and consequently, have
shorter diffusion lengths.
● Higher diffusion lengths are indicative of materials
with longer lifetimes, and is therefore an important
quality to consider with semiconductor materials.
● LOD , The amount of S/D diffusions area that
extends away from the Gate.
 Rates of diffusion
The rate at which diffusion occurs is determined by several factors
The size of the concentration gradient.
● The larger the difference in concentration, the faster diffusion will
occur.
● The thickness of the exchange surface.
● The thinner the exchange surface, the faster diffusion will occur.
● The distance between the two areas
● A shorter distance = faster diffusion
 Effects

● Imbalance sides of diffusions

● LOD occurs while using more no. of fingers
● Threshold voltage(Vt) may varies due to imbalance
diffusion length
● Mobility may varies
 STI
● STI replaced LOCOS because fox create bird beak
which is problem for smaller devices.
● For creating STI: silicon etched out and filled with
insulator. Which create stress on devices.
● Electron mobility will decrease and reverse for
holes.. NMOS becomes slow and PMOS become
faster.
LOCOS
STI Formation
● To cancle the effect of STI we keep out matching
devices away from STI edge.

● Place matched devices in such a pattern that both

device see same effect of STI.

● Dummies are added in end of oxide diffusion so

original device will get far from STI.
Thank You