Unit 1

UNIT I
Power Semiconductor
Devices
Introduction
• What are Power Semiconductor Devices (PSD)?
They are devices used as switches or rectifiers in
power electronic circuits
• What is the difference of PSD and low-power

semiconductor device?
 Large voltage in the off state
 High current capability in the on state
EE2301-POWER ELECTRONICS
Classification
Fig. 1. The power semiconductor devices family

Important Parameters
• Breakdown voltage.
• On-resistance.
Trade-off between breakdown voltage and
on-resistance.
• Rise and fall times for switching between on
and off states.
• Safe-operating area.
Power MOSFET: Structure
Power MOSFET has much higher current handling capability in
ampere range and drain to source blocking voltage(50-100V)
than other MOSFETs.
Fig.2.Repetitive pattern of the cells

structure in power MOSFET
Power MOSFET: R-V Characteristics
An important parameter of a power MOSFET is on resistance:
L
Ron  RS  RCH  RD , where RCH 
W nCox (VGS  VT )
Fig. 3. Typical RDS versus ID characteristics of a MOSFET.
Thyristor: Structure
• Thyristor is a general class of a four-layer pnpn
semiconducting device.
Fig.4 (a) The basic four-layer pnpn structure.

(b) Two two-transistor equivalent circuit.
Thyristor: I-V Characteristics
Three States:
Reverse Blocking
Forward Blocking
Forward Conducting
Fig.5 The current-voltage

characteristics of the pnpn device.
Applications
Power semiconductor devices have widespread
applications:
Automotive
Alternator, Regulator, Ignition, stereo tape
Entertainment
Power supplies, stereo, radio and television
Appliance
Drill motors, Blenders, Mixers, Air conditioners
and Heaters
Thyristors
• Most important type of power

semiconductor device.
• Have the highest power handling
capability.they have a rating of 1200V /
1500A with switching frequencies ranging
from 1KHz to 20KHz.
• Is inherently a slow switching device
compared to BJT or MOSFET.
• Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.
Different types of Thyristors
• Silicon Controlled Rectifier (SCR).
• TRIAC.
• DIAC.
• Gate Turn-Off Thyristor (GTO).
SCR
Symbol of
Silicon Controlled
Rectifier
Structure
Gate Cathode
+
n
19
10
-3
cm
+
n
19
10 cm
-3
 10m

J3 - 17 -3
p 10 cm 30-100m

J2
–
n
13
10 -5 x 10
14
cm
-3 50-1000m
J1
p
+
17
10 cm
-3
 30-50m
19 -3
p 10 cm
Anode
Device Operation
Simplified model of a
thyristor
V-I
Characteristics
Effects of gate current
Two Transistor Model of SCR
Considering PNP transistor
of the equivalent circuit,
I E 1  I A , I C  I C1 ,  1 ,
I CBO  I CBO1 , I B  I B1
 I B1  I A 1  1   I CBO1    1
Considering NPN transistor
of the equivalent circuit,
I C  I C2 , I B  I B2 , I E2  I K  I A  I G
I C2   2 I k  I CBO2
I C2   2  I A  I G   I CBO2     2 
From the equivalent circuit,
we see that
 I C2  I B1
 2 I g  I CBO1  I CBO 2
 IA 
1  1   2 
Case 1: When I g  0
I CBO1  I CBO2
IA 
1  1   2 
Case 2: When IG  0
 2 I g  I CBO1  ICBO 2
IA 
1  1   2 
Turn-on
Characteristics
ton  td  tr
VAK
tC
tq
IA
di
Commutation
Anode current dt
begins to
decrease Recovery Recombination
t1 t2 t3 t4 t5
tq=device off time

Turn-off
trr tgr
tc=circuit off time
tq Characteristi
tc
EE2301-POWER ELECTRONICS c
Methods of Thyristor Turn-on
• Thermal Turn-on.
• Light.
• High Voltage.
• Gate Current.
• dv/dt.
Thyristor Types
• Phase-control Thyristors (SCR’s).
• Fast-switching Thyristors (SCR’s).
• Gate-turn-off Thyristors (GTOs).
• Bidirectional triode Thyristors (TRIACs).
• Reverse-conducting Thyristors (RCTs).
• Static induction Thyristors (SITHs).
• Light-activated silicon-controlled rectifiers
(LASCRs).
• FET controlled Thyristors (FET-CTHs).
• MOS controlled Thyristors (MCTs).
Phase Control Thyristor
• These are converter thyristors.
• The turn-off time tq is in the order of 50 to
100sec.
• Used for low switching frequency.
• Commutation is natural commutation
• On state voltage drop is 1.15V for a 600V
device.
• They use amplifying gate thyristor.
Fast Switching
Thyristors
• Also called inverter thyristors.
• Used for high speed switching applications.
• Turn-off time tq in the range of 5 to 50sec.
• On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
• High dv/dt and high di/dt rating.
Bidirectional Triode
Thyristors (TRIAC)
Mode-I
Operation
MT (+) 2
P1
N1
P2
Ig
N2
MT2 Positive,
MT1 ()
G Gate Positive
V
(+)
Ig
Mode-II
Operation
MT (+) 2
P1
Initial Final
N1
conduction conduction
P2
N3 N2
MT2 Positive,
MT1 () Gate Negative
G
V
Ig
Mode-III Operation
MT 2 ()
N4
P1
N1
P2
N2
MT2 Negative,
G MT1 (+)
(+) Gate Positive
Ig
Mode-IV Operation
MT2 ()
N4
P1
N1
N3
P2 MT2 Negative,
G MT 1 (+)
Gate Negative
(-)
Ig
Triac Characteristics
BJT structure
heavily doped ~ 10^15 lightly doped ~ 10^8 lightly doped ~ 10^6
provides the carriers
note: this is a current of electrons (npn case) and so the

conventional current flows from collector to emitter.
BJT characteristics
BJT characteristics
BJT modes of operation
Mode EBJ CBJ

Cutoff Reverse Reverse
Forward Forward Reverse
active
Reverse Reverse Forward
active
Saturation Forward Forward
BJT modes of operation
Cutoff: In cutoff, both junctions reverse biased. There is very little current flow, which
corresponds to a logical "off", or an open switch.
Forward-active (or simply, active): The emitter-base junction is forward biased and the
base-collector junction is reverse biased. Most bipolar transistors are designed to afford the
greatest common-emitter current gain, βf in forward-active mode. If this is the case, the
collector-emitter current is approximately proportional to the base current, but many times
larger, for small base current variations.
Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the

forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the
emitter and collector regions switch roles. Since most BJTs are designed to maximise
current gain in forward-active mode, the βf in inverted mode is several times smaller. This
transistor mode is seldom used. The reverse bias breakdown voltage to the base may be an
order of magnitude lower in this region.
Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates
current conduction from the emitter to the collector. This mode corresponds to a logical
"on", or a closed switch.
BJT structure (active)
current of electrons for npn transistor – IE IC

conventional current flows from - VCE +
collector to emitter. E C
- +
VBE IB VCB
+
EE2301-POWER ELECTRONICS -
B
MOSFET
• NMOS: N-channel Metal
Oxide Semiconductor
• L = channel length
W
GATE • W = channel width
“Metal” (heavily
doped poly-Si) DRAIN
SOURCE
• A GATE electrode is placed above (electrically insulated
from) the silicon surface, and is used to control the
resistance between the SOURCE and DRAIN regions
N-channel MOSFET
Gate
IG Drain
Source
IS gate ID
oxide insulator
n n
p
• Without a gate-to-source voltage applied, no current can

flow between the source and drain regions.
• Above a certain gate-to-source voltage (threshold
voltage VT), a conducting layer of mobile electrons is
formed at the Si surface beneath the oxide. These
electrons can carry current between the source and drain.
N-channel vs. P-channel
MOSFETs
NMOS PMOS
n+ poly-Si p+ poly-Si
n+ n+ p+ p+
p-type Si n-type Si
• For current to flow, VGS > VT • For current to flow, VGS < VT
• Enhancement mode: VT > 0 • Enhancement mode: VT < 0
• Depletion mode: VT < 0 • Depletion mode: VT > 0
– Transistor is ON when VG=0V – Transistor is ON when VG=0V
(“n+” denotes very heavily doped n-type material; “p+” denotes very heavily doped p-type material)
MOSFET Circuit Symbols
NMOS G G
n+ poly-Si
n+ n+ S S
p-type Si
PMOS G G
Body
p+ poly-Si
p+ p+ S S
n-type Si
Body
MOSFET Terminals
• The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
– For an n-channel MOSFET, the SOURCE is biased at a lower
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
– For a p-channel MOSFET, the SOURCE is biased at a higher
potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )
• The BODY terminal is usually connected to a fixed potential.

– For an n-channel MOSFET, the BODY is connected to 0 V
– For a p-channel MOSFET, the BODY is connected to VDD
NMOSFET IG vs. VGS Characteristic
Consider the current IG (flowing into G) versus VGS :
IG
G
S D
VDS
oxide
VGS +
 semiconductor +

IG
The gate is insulated from the
semiconductor, so there is no
significant steady gate current.
always zero!
VGS
NMOSFET ID vs. VDS Characteristics
Next consider ID (flowing into D) versus VDS, as VGS is varied:
G ID
S D
VDS
oxide
VGS +
 semiconductor +

ID Above threshold (VGS > VT):

“inversion layer” of electrons
VGS > VT appears, so conduction
between S and D is possible
zero if VGS < VT
VDS Below “threshold” (VGS < VT):
no charge  no conduction
The MOSFET as a Controlled Resistor
• The MOSFET behaves as a resistor when VDS is low:
– Drain current ID increases linearly with VDS
– Resistance RDS between SOURCE & DRAIN depends on VGS
• RDS is lowered as VGS increases above VT oxide thickness  tox
NMOSFET Example:
ID
VGS = 2 V
VGS = 1 V > VT
VDS
Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)]

IDS = 0 if VGS < VT where Cox  eox / tox
ID vs. VDS Characteristics
The MOSFET ID-VDS curve consists of two regions:

1) Resistive or “Triode” Region: 0 < VDS < VGS  VT
W  VDS 
ID  k n VGS  VT  VDS
L  2 
where k n   n Cox
process transconductance parameter
2) Saturation Region:
VDS > VGS  VT
kn W
I DSAT  VGS  VT 2
2 L
where kn   nCox “CUTOFF” region: VG < VT
The Evolution Of IGBT
Part I: Bipolar Power Transistors
• Bipolar Power Transistor Uses Vertical Structure For
Maximizing Cross Sectional Area Rather Than Using Planar
Structure
Base Emitter
Collector
N+
Base
N+
N-
Emitter
Collector
Part II:Power MOSFET
• Power MOSFET Uses Vertical Channel Structure Versus
The Lateral Channel Devices Used In IC Technology
Gate
Source
Drain
SiO2
n+ n+
P P
n- Gate
n-
Source
Drain
Lateral MOSFET structure
Part III: BJT(discrete) + Power MOSFET(discrete)
• Discrete BJT + Discrete Power MOSFET In Darlington
Configuration
C
N-MOSFET
D
G
S
NPN B
E
Part IV: BJT(physics) + Power MOSFET(physics) = IGBT
• More Powerful And Innovative Approach Is To Combine

Physics Of BJT With The Physics Of MOSFET Within Same
Semiconductor Region
• This Approach Is Also Termed Functional Integration Of

MOS And Bipolar Physics
• Using This Concept, The Insulated Gate Bipolar Transistor

(IGBT) Emerged
• Superior On-State Characteristics, Reasonable Switching

Speed And Excellent Safe Operating Area
Part IV: BJT(physics) + Power MOSFET(physics) = IGBT
• IGBT Fabricated Using Vertical Channels (Similar To Both
The Power BJT And MOSFET)
E
Emitter Gate
n+
p - base
p+
NPN G
n- - drift
N-MOSFET
PNP
p+ - substrate
Collector C
Device Operation
• Operation Of IGBT Can Be Considered Like A PNP
Transistor With Base Drive Current Supplied By The
MOSFET
DRIVER CIRCUIT (BASE / GATE)
• Interface between control (low power electronics) and (high power) switch.
• Functions:
– amplifies control signal to a level required to drive power switch
– provides electrical isolation between power switch and logic level
• Complexity of driver varies markedly among switches. MOSFET/IGBT drivers

are simple but GTO drivers are very complicated and expensive.
ELECTRICAL ISOLATION FOR DRIVERS
• Isolation is required to prevent damages on

the high power switch to propagate back to
low power electronics.
• Normally opto-coupler (shown below) or high

frequency magnetic materials (as shown in
the thyristor case) are used.
ELECTRICAL ISOLATION FOR DRIVERS
• Power semiconductor devices can be categorized into 3

types based on their control input requirements:
a) Current-driven devices – BJTs, MDs, GTOs

b) Voltage-driven devices – MOSFETs, IGBTs, MCTs
c) Pulse-driven devices – SCRs, TRIACs
CURRENT DRIVEN DEVICES (BJT)
• Power BJT devices have low current gain due to

constructional consideration, leading current than would
normally be expected for a given load or collector current.
• The main problem with this circuit is the slow turn-off time.
Many standard driver chips have built-in isolation. For
example TLP 250 from Toshiba, HP 3150 from Hewlett-
Packard uses opto-coupling isolation.
ELECTRICALLY ISOLATED DRIVE CIRCUITS
EXAMPLE: SIMPLE MOSFET GATE DRIVER
• Note: MOSFET requires VGS =+15V for turn on and 0V to

turn off. LM311 is a simple amp with open collector
output Q1.
• When B1 is high, Q1 conducts. VGS is pulled to ground.

MOSFET is off.
• When B1 is low, Q1 will be off. VGS is pulled to VGG. If

VGG is set to +15V, the MOSFET turns on.

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UNIT I

• What is the difference of PSD and low-power

Fig. 1. The power semiconductor devices family

Fig.2.Repetitive pattern of the cells

Fig. 3. Typical RDS versus ID characteristics of a MOSFET.

Fig.4 (a) The basic four-layer pnpn structure.

Fig.5 The current-voltage

• Most important type of power

tq=device off time

note: this is a current of electrons (npn case) and so the

Mode EBJ CBJ

Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the

current of electrons for npn transistor – IE IC

• Without a gate-to-source voltage applied, no current can

• The BODY terminal is usually connected to a fixed potential.

ID Above threshold (VGS > VT):

Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)]

The MOSFET ID-VDS curve consists of two regions:

• More Powerful And Innovative Approach Is To Combine

• This Approach Is Also Termed Functional Integration Of

• Using This Concept, The Insulated Gate Bipolar Transistor

• Superior On-State Characteristics, Reasonable Switching

– provides electrical isolation between power switch and logic level

• Complexity of driver varies markedly among switches. MOSFET/IGBT drivers

• Isolation is required to prevent damages on

• Normally opto-coupler (shown below) or high

• Power semiconductor devices can be categorized into 3

a) Current-driven devices – BJTs, MDs, GTOs

• Power BJT devices have low current gain due to

• Note: MOSFET requires VGS =+15V for turn on and 0V to

• When B1 is high, Q1 conducts. VGS is pulled to ground.

• When B1 is low, Q1 will be off. VGS is pulled to VGG. If

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