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By
Harish
What is Electromigration?
Gradual displacement of metal atoms in a semiconductor
when the current density is high enough to cause the drift of
metal ions in the direction of the electron flow
Depends on the magnitude of forces that tend to hold the ions
in place
nature of the conductor, crystal size and interface
current density, temperature and mechanical stresses
Failure Mechanism
There are two different EM failure mechanisms that occur
due to asymmetry in the ion flow.
A void where the outgoing ion flux exceeds the incoming
ion flux: open circuit
Failure Mechanism
A hillock where the incoming ion flux exceeds the
outgoing ion flux: short circuit
Electromigration Dependency on Physical
Effects
Wire Width
By increasing the wire width, current density is reduced and
susceptibility to EM is reduced
Wire Length
a lower limit for the length of interconnect that will be subjected
to the effects of electron migration
Electromigration Dependency on Physical
Effects
Impact of Physical Layout
Interconnect layout has an impact on electron migration and
current density
90° corners and rapid wire width reduction should be avoided
current crowding and rapid increase in current density
exacerbate EM
IR Drop
For IR drop :
Going for higher metal (wider width)
Parallel routing
Tools for EM IR checks
Extension file ?
Metal slotting?
Static and dynamic drop?