Electronic Circuits in An Automotive Environment: Herman Casier AMI Semiconductor Belgium

 Electronic Circuits
 in an
 Automotive Environment
Herman Casier
 AMI Semiconductor Belgium
 herman_casier@amis.com
Outline 1
 Introduction
 Automotive Market and trends
 Characteristics of Electronics in a car
 Automotive Electronics Challenges
 Cost and Time To Market

 Quality and Safety
 Quality requirements
 Safety requirements
 DFMEA
2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 2

Outline 2
 High Voltage : the car battery
 History of the car battery
 Why switching over to 42V PowerNet
 Specifications of car-batteries
 Example: lamp-failure detector
 Example: high-side driver
 High Temperature requirements
 Temperature range specification
 Functionality and reliability limits
 Diode leakage currents
 Example: bandgap circuit
 Example: SC-circuit

Outline 3
 EMC general
 Definition of EMC
 Compliance and pre-compliance tests
 EMC standards
 EMC standards in IC-design
 EME – Electro Magnetic Emission

 1/150 test method
 EME what happens?
 EME how to cope with?
 Example: digital circuit current peaks
 Example: CANH differential output

Outline 4
 EMS – Electro Magnetic Susceptibility
 DPI – Direct Power Injection method
 EMS compliance levels
 EMS what happens?
 EMS how to cope with?
 Example: rectification of single ended signal
 Example: rectification of differential signal
 Example: substrate currents in ESD diodes
 Types of substrate currents
 Example: jumper detection

Outline 5
 Automotive transients (ISO-7637)
(sometimes called Schaffner pulses)
 Transient pulse definitions
 Transient pulses what happens?
 Example: supply & low-side driver
 Example: bandgap circuit
 Acknowledgments
 References

Trends in automotive
CAR Technology TRAFFIC DRIVER SKILLS
> 1891 mechanical system very low very high technical skills
> 1920 + pneumatic systems low high technical skills

+ hydraulic systems low driving skills
> 1950 + electric systems increasing good technical skills increasing
driving skills
> 1980 + electronic systems congestion low technical skills

+ optronic systems starts high driving skills
> 2010 + nanoelectronics congested very low technical skills

+ biotronic systems optimization decreasing driving skills
starts
> 2040 + robotics maximal and no technical skills

+ nanotechnology optimized no driving skills
Automotive Electronics
Phase 1: Introduction of Electronics
in non-critical applications
 Driver information and entertainment
e.g. radio,
 Comfort and convenience
e.g. electric windows, wiper/washer, seat heating, central
locking, interior light control …
 Low intelligence electronic systems

 Minor communication between systems
(pushbutton control)
 No impact on engine performance
 No impact on driving & driver skills
Phase 2: Electronics support critical applications
 Engine optimization:
e.g. efficiency improvement & pollution control
 Active and Passive Safety
e.g. ABS, ESP, airbags, tire pressure, Xenon lamps …
e.g. radio-CD-GPS, parking radar, service warnings …
 Comfort, convenience and security:
e.g. airco, cruise control, keyless entry, transponders …
 Increasingly complex and intelligent electronic systems
 Communication between electronic systems within the car
 Full control of engine performance
 No control of driving & driver skills
But reactive correction of driver errors.
 Electronics impact remains within the car

Phase 3: Electronics control critical applications
 Full Engine control
e.g. start/stop cycles, hybrid vehicles …
 Active and Passive Safety
e.g. X by wire, anti-collision radar, dead-angle radar …
e.g. traffic congestion warning, weather and road conditions …
 Comfort and convenience
 Very intelligent and robust electronics
 Communication between internal and external systems
Information exchange with traffic network
 Full control of engine performance
 Control of driving and (decreasing) driving skills
Proactive prevention of dangerous situations inside
and around the car
 Full control of car and immediate surroundings

Phase 4: Fully Automatic Driver (1st generation)
 Traffic network takes control of the macro
movements (upper layers) of the car
 Automatic Driver executes control of the car and immediate
surroundings (lower and physical layers)
ADAM : Automatic Driver for Auto-Mobile

or EVA : Elegant Vehicle Automat
 Driver has become the Passenger for the complete

or at least for most of the journey
 Driver might still be necessary if
ADAM becomes an Anarchistic Driver And Madman

or EVA becomes an Enraged Vehicle Anarchist

Automotive Drivers
 Safety (FMEA)
 level 1: remains “in-spec” in Harsh environment
 Increasing Complexity
 more functions and more intelligence : makes
the car system more transparant for the driver
 Increasing Accuracy
 More, higher performance sensors : cheapest
sensors require most performance
 Low cost and Time-To-Market (of course)
 Legislation
Automotive IC’s
HBIMOS (2.0µm) I2T (0.7µm) I3T (0.35µm)

Technology Evolution
Feature size trend versus year of market introduction
for mainstream CMOS and for 80-100V automotive technologies
Technology Node
(µm)
10 BIMOS-7µm
SBIMOS-3µm
HBIMOS-2µm
1.0 I2T-0.7µm
CMOS I3T-0.35µm
0.1
1980 1990 2000 2010

Year of Market Introduction

Introduction
Top automotive vehicle manufacturers (2000)
(top 14 manufacturers account for 87% of worldwide production)
Source: Automotive News Datacenter - 2001

Introduction
Automotive electronic Automotive semiconductor
equipment revenue forecast consumption forecast
100 25
90
80 Other Auto 20
Remote/Keyless Entry
70
Climate Control unit
60 Airbags
15
B$
B$
50 Dashboard Instr.
40 Auto Stereo 10
GPS
30
ABS
20 5
Engine Control units
10
0 0
2003 2004 2005 2006 2003 2004 2005 2006
CAGR = 6.6% (2002–2006) CAGR = 13.2% (2002–2006)

Source : Dataquest December 2002
Introduction
Total semiconductor market (US$B)
300
Military/Aero (3% )
CAGR=8% (2002-06)
250
Industrial (7% )
CAGR=12% (2002-06)
200
Automotive (8% )
CAGR=13% (2002-06)
150
Consumer (17% )
CAGR=15% (2002-06)
100 Communications (24% )
CAGR=14% (2002-06)
50 Data Processing (41% )
CAGR=12% (2002-06)
0
Source : Dataquest November 2002
2001 2002 2003 2004 2005 2006
Introduction
Where do we find electronics in a car
Compass Interior Light System Power Window Sensor
Automated
Cruise Control Auto toll Payment Stability Sensing
Rain sensor
Entertainment
Head Up Display
LED brake light
Dashboard controller
Light failure control
Backup Sensing
Information
Navigation
Engine: Keyless entry
Injection control Central locking
Injection monitor
Oil Level Sensing
Air Flow Suspension control
Throttle control Key transponder
Valve Control Door module
Seat control:
Headlight: Position/Heating
Position control
Power control Airbag Sensing &Control
Failure detection
E-gas Gearbox: Position control
Brake Pressure

Introduction
Electronics are distributed all over the car-body
 Distributed supply used for both power drivers
and low power control systems
 direct battery supply for the modules: high-
voltage with large variation
Trend: Battery voltage from 12V  42V
 large supply transients due to interferences of
high-power users switching or error condition
(load-dump)
Trend: comparable supply transients, lower load-
dump transient

Introduction
 Modules, distributed over the car-body have to
comply with stringent EMC and ESD
 low EME to other modules and external world
 low EMS (high EMI) for externally and internally
generated fields
 High ESD and system-ESD requirements
Trend: increasing EMC frequency and EMC field
strength for the module.
Trend: increasing ESD voltages and power
Trend: more integration brings the module border
closer to the chip border : the chip has to comply
with higher EMC field strengths and ESD power.
Introduction
 Modules on all locations in the car, close to
controlled sensors and actuators
 large temperature range: - 40 … +150°C ambient
Trend: increasing ambient temperature
 Critical car-functions controlled by electronics
 Safety & reliability very important
Trend: increasing safety and reliability
requirements
 Communication speed and reliability
Trend: higher speed, lower/fixed latency, higher
reliability and accident proof communications

Introduction
 Many modules interface with cheap (large offset,
low linearity) and low-power sensors
 High accuracy and programmability of sensor
interface: sensitivity, linearization, calibration …
Trend: increasing sensor interface accuracy,
speed and programmability with higher interference
rejection and more intelligence
 SOC-type semiconductors in module
 Lower cost mandates single chip
Trend: increasing intelligence requires state-of-the-
art technology with high-voltage (80V), higher
temperature (175°C ambient) and higher
interference rejection (EMC, ESD) capabilities

Automotive Electronics Challenges
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EMC
EMC &&
Automotive High
High Voltage
Voltage
Automotive
transients High
High Temp.
Temp.
transients

Cost & Time To Market
 The automotive market is very cost driven :
“Bill of Materials” and “Cost of Ownership”
more important than component cost
 Time To Market is quite long : start design

to production is typically 2 … 3 yrs
but Time To Market is in fact “Time to OEM
qualification slot” which is not flexible
 Prestudy, design, redesign : typ 12 … 18 month
 Automotive IC qualification : typ 3 … 4 month
 OEM qualification : typ 6 … 12 month
The start of the OEM qualification is a very
hard deadline
Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EMC
EMC && High
High
Automotive
Automotive Voltage
Voltage
transients
transients High
High Temp.
Temp.

Quality and Safety
 Required reliability ?
 Most cars actually drive less than 10.000hrs
over the cars lifespan of 10 … 15 years
 Most electronics also only functioning during
10.000hrs but some are powered for > 10years
 High reliability requirements : 1ppm
 for production reasons (low infant mortality)
 for safety reasons and long lifetime (failure rate).
 Implications
 Design : 6 sigma approach
 Test: high test coverage (digital and analog),
test at different temperatures
IDDQ, Vstress for early life-time failures
 Packaging : high reliability

Quality and Safety
 Safety requirements ?
 If a problem affects the performance, the
circuit/module functionality must remain safe
(predictable behavior).
Problems: circuit/system failure, EMC
disturbance, car-crash (within limits) …
 Non-vital functions may become inoperable until
the problem disappears
 Vital parts must remain functional
 Implications
 Fault tolerant system set-up
 Worst Case Design including EMC disturbance
 DFMEA (Design Failure Mode and Effect Analysis)

DFMEA
What : Failure Mode and Effect Analysis is a
disciplined analysis/method of identifying
potential or known failure modes and providing
follow-up and corrective actions before the first
production run occurs. (D.H. Stamatis)
Why : avoid the natural tendency to underestimate
what can go wrong
 FMEA extends from subcircuit to component to

system and assembly and to service, where each
FMEA is an input for the next level.
 Design FMEA (DFMEA) concerns the component
design level.
DFMEA
 FMEA does not include prototypes and samples
because up to that point, modifications are part of
the development.
It is good practice though to include DFMEA
already in the prestudy for its large implications
on the final circuit
 In the automotive industry, a standardized form
and procedure has been published by AIAG
 The header is not standardized and contains the
design project references, the DFMEA version
control, team and the authorization signatures.
 The second part includes the mandatory items

DFMEA
 Mandatory items for the DFMEA
 Functional block
 Identification number
 Circuit part and Design function
e.g. input CLCK_in, Schmitt-trigger function
 Actual state of the circuit (I)
 Potential failure mode
e.g. no hysteresis or hysteresis in one direction only
 Potential effect of failure
e.g. oscillation of clock signal
 [S] Severity of the failure: rank 1 … 10
e.g. 8 : critical failure: product inoperable

DFMEA
 Mandatory items for the DFMEA (II)
 Actual state of the circuit (II)
 Potential cause of failure
e.g. Metal 1 crack
 [O] likelihood of Occurrence of failure: rank 1 …10
e.g. 5 : medium number of failures likely
 Preventive and Detection methods
e.g. digital test of input does not include hysteresis
 [D] likelihood of Detection of failure: rank 1 … 10
e.g. 7 : low effectiveness of actual detection method
 [RPN] Risk Priority Number: [RPN] = [O] x [S] x [D]
e.g. 280 : high value : corrective action required

DFMEA
 Mandatory items for the DFMEA (III)
 Corrective action
 recommended corrective action
e.g. include hysteresis test in test-program
 Responsible Area or Person and Completion Date
e.g. test engineer NN, wk 0324
 Corrected state of the circuit
 Corrective action taken
e.g. testprogram version B1A
 [O] : Revised Occurrence rank e.g. 8 (unchanged)
 [S] : Revised Severity rank e.g. 5 (unchanged)
 [D] : Revised Detection rank
e.g. 1 : effect measured by standard test program
 [RPN] : Revised Risk Priority Number e.g. 40

DFMEA example

DFMEA example

Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EMC
EMC && High
High Voltage
Voltage
Automotive
Automotive
transients
transients High
High Temp.
Temp.

High Voltage : the car-battery
 Some History
 ~ 1955: 12 Volt battery introduced for cranking
large & high compression V8 engines
 1994: workshops in USA and Europe to define
the architecture for a future automotive
electrical system.
 1995: study at MIT for the optimal system.
 the highest possible DC voltage is best.
 1996: future nominal voltage = 42 Volt
 multiple of low-cost lead-acid battery
 below 60 Volt under all conditions
(60V = shock-hazard protection limit for DC voltages)

The car-battery
 March 24, 1997: Daimler-Benz presents the
“Draft Specification of a Dual Voltage
Vehicle electrical Power System 42V/14V”
 is the de-facto standard since it is
supported by the > 50 consortium
members (http://www.mitconsortium.org)
 The name:
42V = 3 X 12 V Lead-Acid Battery

nominal operating voltage of a 12Volt battery is 14 Volt
The car-battery
High Power
M 42 Volt loads
Starter
DC
G 14 Volt loads
DC
Alternator
Battery 2 Battery 1
42Volt 14 Volt
Example of a dual voltage power system 14V/42V

The system can be equipped with two batteries or with one main
battery (14V or 42V) and a smaller backup battery for safety
applications …
The car-battery
Forecast of the 42V vehicle share in relation
to the overall vehicle production in Europe

The car-battery
Why switching over to 42Volt battery ?
 Electrical power consumption in a car rises
beyond the capabilities of a 12Volt battery.
 Limit for 14V generator power ~ 3kW
 Mean power consumption of a luxury car ~ 1.1kW
(corresponds to ~ 1,5l/100km fuel in urban traffic)
 The required power for all installed applications in
luxury cars already exceeds the generator
capability.
 New applications e.g. ISG (Integrated-Starter-
Generator), X-by-wire, require much higher power

The car-battery
 Alternator efficiency increases from 50% to
75% or more and creates smaller load-dump
pulse (voltage supply pulse when the alternator
runs at full power and the battery is disconnected)
 New power hungry systems possible
 Electro mechanical or hydraulic brakes
 Electric water pumps
 “Stop-start system”: Integrates Starter and
Generator in a single unit (ISG).
 Electromechanical engine valve actuators
 ……
The car-battery
 Most existing systems benefit from 42V
 Heating, ventilation and air conditioning
 Engine cooling (eliminates belts)
 Electromechanic gear shifting
 …..
 Some systems still require 14V

 Incandescent ligtbulbs
 Low-power electronic modules
 Existing high-volume modules because of
redesign, qualification and production costs

The car-battery
Specification of the 42V battery
-2 0 18 21 30 50 58
maximum dynamic
overvoltage (load dump)
maximum continuous generator
voltage including ripple
nominal voltage
minimum continuous operating voltage
ground
minimum start voltage: 18V @ 15msec, 21V @ 500msec
non-continuous battery reversal: -2V @ 100msec

The car-battery
 Other specifications
 Battery reversal: no destruction
- non-continuous, small voltage for 42V
- continuous, full battery voltage for 12V systems
 Short drops: reset may occur
30V  16V / 100msec at 16V / 16V  30V
 Slow increase/decrease: no unexpected behavior
48V  0V @ -3V/min. & 0V  48V @ +3V/min
 Voltage drop test: reset behaves as expected
42V  30V  21V  30V  20.5V  30V  20V
… and so on to … 30V  0.5V  30V  0V.
 Electric modules see this car-battery voltage, which
is further disturbed by conductive transients
(ISO7637) and by ESD pulses.
The car-battery
Example specification
of the current 12V battery
0 7 9 14 19 40
maximum dynamic
overvoltage (load dump)
ground maximum continuous generator voltage
battery reversal nominal voltage
minimum continuous operating voltage
minimum start voltage

The car-battery
Translation of the 42V battery specification
into an 80V Technology requirement
-2 0 18 21 30 50 58
-2 0 18 21 30 50 62 70 80
+ 12V @ charge pump

for high-side drivers ...
+ 10V margin for ESD
clamping structures
fabrication margin

Example
Lamp-failure
VDDA
detector
Vbatt
LDO
Vreg  Directly connected
to the car-battery
Vbg
Fuse
 Sense inputs can
Vreg be above or below
Rsense V
level Lamp OK VDDA
shift
CMOS  V(Rsense) detection
Lamp logic
Fuse OK
Accuracy < 10mV
level
Vref
shift
Switch  Output: low voltage
CMOS levels

Example
Vbatt Fuse
Rsense
CMOS
Lamp logic
Switch
ESD Schaffner V Level

prot. protection generator Comp. shifter

Example
 Solution based on the low impedance of the source:
the comparator and level shifter extract their supply
from the sensor input.
 ESD protection of the input with automotive-transient
(Schaffner) resistant zener diodes (BVCES > 80V)
 Protection for automotive transients (Schaffner) of all
points connected to the car-battery by relative high
value polysilicon resistors.
 Resistors limit current during transient spikes
 Floating resistors can handle positive and negative spikes
 Accuracy not impacted if IbxRpoly << 1mV
 Adaptive V generator
Example
High-Side Driver for external NDMOS
Vbatt
D D D D Cext
Vbatt
D
D external
NDMOS D D D D
Aout
Vcc D D
D D
Vcc D D D D
LOAD
OSC. ON OFF
Ain
charge pump with ON / OFF level shifters

full swing invertor with slew rate control full swing inverter

Example
 High-side driver for external NDMOS
 Simple Dixon charge pump
 High voltage diodes
 Tank-voltage controlled by Vcc-regulator
 Uses a full-swing inverter (separate schematic)
 External tank capacitor
 ON / OFF control logic
 Controlled charge and discharge current
 controlled slew rate for minimum EME
 Bleeding resistors for low power and high temp.
 Simplified schematic:
 no protection circuits except Vgs-zener for NDMOS
 no flyback & no important ground-shift between IC and
Load : NDMOS cannot go below substrate

Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EMC
EMC && High
High Voltage
Voltage
Automotive
Automotive
transients
transients High
High Temp.
Temp.

High Temperature
Temperature Range Specifications
 Low temperatures :
 Environment e.g. Nordic countries, Alaska …
 Typical specification: - 50degC … - 40degC
 High temperatures :
 Engine compartiment, brakes, lamps …
e.g. engine switch-off stops cooling and engine
heat distributes. Engine restart however must
work correctly
 Typical specifications for Automotive ICs today :
125 … 150degC ambient with short peaks up to
170 … 200degC. (power devices go higher)
 Requirements are increasing.

High Temperature Requirements
Temperature zones
and % of total operation time
Mounting zone Module description
in each temperature zone
T1 (5%) T2 (20%) T3 (65%) T4 (10%)
Temperate zone, thermally

- 40 °C 25 °C 60 °C 85 °C
isolated
Engine Splash wall - 40 °C 25 °C 90 °C 140 °C

Compartiment Attached to the engine or
- 40 °C 25 °C 95 °C 150 °C
attached to the gearbox
Throttle valve, close to the
- 40 °C 25 °C 120 °C 205 °C
exhaust
Locations exposed to heat
- 40 °C 25 °C 90 °C 120 °C
Chassis sources
Near breaks or hydraulics - 40 °C 25 °C 105 °C 175 °C
Dashboard, hat rack - 40 °C 25 °C 60 °C 110 °C
Cabin Roof under strong sun
- 40 °C 25 °C 90 °C 115 °C
exposure
T4: Temperature extremes in accordance with Source: A.Blessing, AEC

SAE J1211 (5…10% of 7000…12000 hours lifetime)
Workshop Nashville 2004

High temperature limitations
Functionality of on-chip components ?
 Bulk silicon can be used up to ~ 200 … 250degC.
(with appropriate design techniques)
 Below the intrinsic temperature of the lowest doped
regions (~200degC for 100V, ~250degC for 5V techno).
 The MOS transistor remains a transistor,
but with decreasing Vt and decreasing mobility
 increasing sub-threshold leakage
 increasing area
 Diffusion and poly-resistors remain resistors
 Thin oxide capacitors remain capacitors
 Junction diodes remain diodes but the leakage current
goes up drastically.
 SOI can be used up to ~ 250 … 300degC
 GaAs can be used up to ~ 500degC
Reliability of components and package
(most important limitations only)
 Electromigration limits decrease

 use wider metals and more VIAs
 area increase of power devices.
 Diffusion of silicon into aluminum
 using an Al/Si metallization extends the limit
e.g. 1% Si – 99% Al alloy extends this to ~ 500degC.
 Die attach
not important below 200degC.
 use selected epoxies

Reliability of components and package (II)
 Wire bonding: the dominant failure mechanism
 Chemical: inter-metallic growth and void-formation
increases the bondpad/bondwire contact resistance
Very dependent on the type of plastic and the ionic
contamination of the plastic.
 Thermo-mechanical: delamination of bondpad and
bondwire due to stress.
Very dependent on the stress characteristics of plastic,
the type of package and the size of chip.
 Plastic encapsulation: depolymerization of the
epoxy is closely linked to wire bond failure.
New (green) packages are improved
 Low stress (delamination)
 Low ion impurity and ion catching (voids)
Conclusions
 Reliability decreases according to the
Arrhenius-law R(T )  R0  e  E A kT
reliability typically decreases by 2 for every 10degC
 Wire bonding in a plastic package is the
limiting factor for high temperature operation
current limit in production ~ 150degC for 10.000 hrs.
 Diode leakage currents are the main
limitations in circuit design.
 Affect biasing and matching in low-power circuits
 Can give rise to latch-up

Diode Leakage current
 Leakage current mechanisms
 Moderate temperatures: Drift current ~ ni
leakage current dominated by thermal generation of
electron-hole pairs in the depletion region
 High temperatures : Diffusion current ~ ni2
leakage current dominated by minority carrier
generation in the neutral region
 In a single well technology is the PMOS leakage
current (n-well to SP-drain) much lower than the
NMOS leakage current (Epi to SN-drain)
 Higher n-well doping  less minority carriers
 n-well much thinner than epi  less carriers
 Hole mobility lower than electron mobility
 In a twin well is the difference much smaller
Diode Leakage current
Junction area 4 X 20m Nwell, 1.2 m CMOS technology

Epi doping: NA=10e15/cm3
Nwell doping: ND=4x10e16/cm3
junction areas shown in the figure
(P. de Jong - JSSC-vol 33, dec 1998) (I. Finvers - JSSC-vol 30, Feb 1995)

Example : bandgap circuit
 NPN collector-substrate diode:
High voltage, low bad N+/EPI diode, large area :
power bandgap leakage ~ 50 nA @ 150degC/unit.
VDD
E.g. for n=8 & 3.5A/ NPN branch
 10% error in current matching
D D without extra transistor.
D  6.5% bandgap voltage rise.
 PMOS mirror, Drain/Bulk diodes:
good diode with small area and
VBG
balanced leakage  no mismatch
n:1
 PMOS bulk/epi diode leakage
n-1
subtracted from the PDMOS
current source excess current.
 NDMOS body/drain leakage in
VSS
parallel with grounded current
source. Drain/substrate leakage
extracted from supply.
Example : SC circuit
Switched Capacitor Leakage currents:

Circuit: the leakage  OpAmp inputs:
sensitive points are  Gate Tunneling
the OpAmp input  Switches:
nodes in Hold mode.  Sub-threshold leakage
 Drain/Bulk junction
C2
leakage
C1
 Gate/Drain tunneling
 Impact Ionisation
 GIDL
C1
C2
 Capacitor plate leakage
e.g. C2=2pF, 1nA leakage,
 500V/sec CM droop
Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EMC
EMC && High
High
Automotive
Automotive Voltage
Voltage
transients
transients High
High Temp.
Temp.

EMC : Definition
Definition (UK Defense Standard 59-41)
“Electro Magnetic Compatibility is the ability of
electrical and electronic equipments, subsystems and
systems to share the electromagnetic spectrum and
perform their desired functions without unacceptable
degradation from or to the specified electromagnetic
environment.”
In other words:
The Electro Magnetic Emission (EME) must be low
enough, not to disturb the environment
The Electro Magnetic Susceptibility (EMS) must be
low enough, not to be disturbed by the environment

EMC : Examples
 EMS examples
 Unwanted but not safety critical
 Car-radio, GPS …
 Safety-critical systems
require full in-spec functionality during EMC
 ABS system, airbag system, Motor control …
 EME examples
 Unwanted EME sources
 switching of heavy or inductive loads: lamps, start-
motor, ignition …
 fast switching circuits: digital circuits …
 Wanted EME sources
 mobile phones, CB transmitters, radio stations … :
EMC : Compliance tests
 Compliance tests have been standardized

between the car-manufacturers, their
suppliers and the government.
Every car must pass these tests before it is
allowed on the road
 Examples:
 Anechoic Chamber
tests (600-700 V/m)
 Environment tests
(radio station)
 ……..
EMC : Pre-Compliance tests
 The later EMC problems are detected, the more
difficult the identification of the root-cause and the
more limited and expensive the solution.
 At final car qualification level, many modules could
cause the EMC problem and there is no time for a
redesign. The only solution is adding extra shielding
and anti-interference components like chokes, coils,
capacitors, which is very expensive.
 At module qualification level, the PCB layout can be
changed and extra components (chokes, coils, cap’s)
can be added. This has less impact on the bill of
materials but can impact the time to qualification slot.
 It is mandatory to include EMC in all phases of the
development : IC’s, PCB’s, modules and car-layout.
 Pre-compliance tests have been standardized to
enable this at module and at IC level.
EMC : Pre-Compliance tests
 Pre-compliance tests agreed between car-
manufacturer and module-supplier or between
module-manufacturer and IC supplier.
 PRO: module and IC manufacturers make portable
designs
 CON: tendency to end up with a chain of
over-specification
 Of the many EMC standards, 3 standards are
particularly important for IC’s.
 IEC 61967 for EME measurements
(150kHz – 1GHz, narrow-band EME)
 IEC 62132 for EMS measurements
(150kHz – 1GHz, narrow-band EMS)
 ISO 7637 for Automotive transients
(EMS for power supply line disturbances)

EME standard: IEC 61967
 IEC 61967 : Integrated circuits – Measurement
of electromagnetic emissions 150kHz to 1GHz.
 Part 1: General conditions and definitions
 Radiated emission measurements
 Part 2: TEM-cell (Transversal Electromagnetic cell)
 Part 3: Surface scan method
 Conducted emission measurements

 Part 4: 1 Ohm/150 Ohm method
 Part 5: Workbench Faraday Cage method (WBFC)
 Part 6: Magnetic probe method

EMS standard: IEC 62132
 IEC 62132 : Integrated circuits – Measurement
of electromagnetic immunity 150kHz to 1GHz.
 Part 1: General conditions and definitions
 Radiated immunity measurements
 Part 2: TEM-cell (Transversal Electromagnetic cell)
 Conducted immunity measurements
 Part 3: Bulk current Injection method (BCI)
 Part 4: Direct RF Power Injection method (DPI)
 Part 5: Workbench Faraday Cage method (WBFC)

Transients standard: ISO 7637
 ISO 7637 : Road vehicles – Electrical
disturbance by conduction and coupling
 Part 0: General and Definitions
 Part 1: Passenger cars and light commercial
vehicles with nominal 12 V supply voltage –
Electrical transient conduction along supply lines
only
 Part 2: Commercial vehicles with nominal 24 V
supply voltage – Electrical transient conduction
along supply lines only
 Part 3: Passenger cars and light commercial
vehicles with nominal 12 V supply voltage and
Commercial vehicles with nominal 24 V supply
voltage – Electrical transient transmission by
capacitive and inductive coupling via lines other
than the supply lines.
EMC standards in design
 How to include EMC in the IC development flow
 EMC deals with electromagnetic fields.
 EM noise generator emits EM-energy, wanted or
unwanted.
 EM noise receiver susceptible to this EM-energy
 The coupling channel conducts EM-energy from
the noise-generator to the noise-receiver via
radiation or conduction.
radiation
EM-noise
EM-noise EM-noise
EM-noise
generator
generator receiver
receiver
conduction

 EM-fields are not compatible with the SPICE
based simulation environment of IC-design,
which is “electrical only”.
 At the IC level, EM-fields can be modeled by
Electrical fields only since the dimensions on
the chip and in the package are much smaller
than the wave length of the EMC signals
e.g. in air : λ = 30 cm @ 1GHz >> chip dimensions
 On-chip current loops are very inefficient
antennas for electromagnetic emission and
susceptibility. (“rule of thumb”, L < λ / 20).
 The variations are quasi-stationary and a Low-
Frequency modeling with L, R and C is adequate.

 Radiated emission and susceptibility is not the major
problem for IC’s.
 Conducted emission and susceptibility to the
efficient antennas on the PCB and the cable harness
is the important problem.
 Two EMC conductive methods, compatible with
simulation, have been standardized.
 IEC 61967-4 (1 / 150 method)
 IEC 62132-4 (DPI – Direct Power Injection)
Note that ISO 7637 (Schaffner) is compatible

 These methods model conducted EMC between IC
and PCB, not the EM-field. Generated EM-fields are
function of module and wiring layouts.
 Limit setting for these methods is based on the
accumulated experience of the chip and module
manufacturers

 System level test  IC level tests :
 Radiated empirical validation and
susceptibility theoretical analysis
 TEM cell tests  Susceptibility
ISO11452 –3  Like IEC 62132-4
 Shielded chamber (Direct Power
tests ISO11452 –2
Injection)
 Conducted  Like ISO 7637-1
susceptibility (Conductive
 ISO 7637–1 transient pulses)
 Conducted and  Emission
radiated emission  Like IEC 61967-4 (1
CISPR25 Ohm/150 Ohm
 Etc… method)
Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EME
EME &
& EMS
EMS High
High
&& Automotive
Automotive Voltage
Voltage
transients High
transients High Temp.
Temp.

EME 1 / 150 test
impedance matching
network for Line Driver Spectrum analyser
120 6.8nF
Line 150
Driver trace 50
51
DUT
impedance matching
network for CANH-bus
150 30
CANH Spectrum analyser
trace
6.8nF
150 30 110 
CANL 50
trace
51
VDD VSS
Spectrum analyser
RF current
Power 49
probe
50
Supply
1

EME 1 / 150 test
 1 method measures the RF sum current in a
single ground pin (RF current probe).
This measures the RF return current from the
various current loops (emitting antennas) of the
PCB.
 150 method measures the RF voltage at a
single or at multiple output pins, which are
connected to long PCB traces or wiring
harness. (150 is the characteristic impedance of
wiring harnesses in a vehicle).
Various measurement configurations are used
for different types of outputs.
Standard EM-field graph
84 A
dB V 2 1
V
78 B
3 emission limit
72 C 4
66 D
5 example:
60 E
7
6
H-12-n-O
54 F 8
9
a
48 G
b
10
c
d
42 H 11
e
f
g
36 I 12
h
i
13
k
30 K
l
14
m
n
24 L 15
o
p
16
q
18 M
r
s
17
t
12 N
u
18
v
w
6 O 19
y
z
0
105 2 3 4 5 6 8 106 2 3 4 5 6 8 107 2 3 4 5 6 8 108 2 3 4 5 6 8 109 Hz
f

EME what happens
 EME is generated by HF currents in external
loops, which act as antennas.
 Sources of the HF currents
 Switching of core digital logic: glue logic, core, DSP,
memory, clock drivers …
 synchronous logic generates large and sharp
current peaks with large HF content
 Activity of the analog core circuit
 does not generate large current peaks
 Switching of the digital I/O pins
 fast and large current peaks directly to the PCB
 High power output drivers
 large current peaks to the PCB and wiring harness.

EME how to cope with
Internal measures
 Limit the switching power to the external
 Use low power circuits & circuit techniques
- low power flip-flop, memory …
- architecture with different clock domains
- lower or adaptive supply voltage
- ….
Note: gated clocks are not efficient for EME if
modes exist where all gates are open.
 Use a more advanced technology
 Use on-chip capacitors
EME (HF) looks at switching power spectrum,

low-power digital looks at mean dissipated power.
 Shape the current peaks to the external
 Slow down the switching edges
- MS-FF and 2phase clock
- asynchronous logic
- controlled edges for I/O or power driver
- ….
External and Chip-layout measures

 Differential output signals e.g. CAN, LVDS …
twisted-pair like lines generate less EME and are
less susceptible to EME
 VDD and VSS close to each other
- differential signals (see above)
- external decoupling easier and more efficient
 EME of the module is the result of the current
peaks generated by the IC times the
efficiency of the emitting antennas of the PCB
and wiring harness.
 The current peaks simulated or measured with
the 1 / 150 method do not predict the correct
value of the emission but give a good relative
indication. A correlation with the actual
measured EME of the module is required.
 Each manufacturer specifies his own limits
for the emission as simulated or measured
by the IEC 61967-4 1 / 150 method.

Example
 In the example, spectra of pulse slope
80% Wpulse
pulse top
20% Wpulse
different current pulses are

evaluated. The current
pulses are simplified. pulse width
Wpulse
 Simulated spectra
 Reference current pulse in existing technology.
100mA outgoing pulse  100mV in 1 probe
 Distributed pulse: amp. / 2, freq. x 2
 HF spectrum remains, LF spectrum changes
 Pulse with slower edges & same power: amp. / 2
 HF spectrum lower, LF spectrum remains
 Same logic in newer technology (2 generations):
power / 2, amp. X 1, width / 2, slopes x 2
 HF spectrum higher, LF spectrum lower
Example
Spectrum of different pulses
84 A
[E-4-c]
[E-5-e]
[F-4-b]
[E-4-c]
dB V 2 1 reference spectrum

78 B & distributed pulse
3
V
72 C 4
5
66 D
(100mV, 5.0nsec, 1MHz)
( 50mV, 10.0nsec, 1MHz)

(100mV, 2.5nsec, 1MHz)
( 50mV, 5.0nsec, 2MHz)
6
60 E
7
54 F 8
9
gy
a
48 G
b
olo
10
es
c
p
hn
o
d
42 H 11 sl
e
lse
tec
f
p u
g
36 I
w 12
er
h
ne
o w
i
13 sl
k
30 K
l
14
m
slower pulse slopes
n
L
reference spectrum
24 15
o
p
distributed pulse
new technology
16
q
18 M
r
s
17
t
12 N
u
18
v
w
6 O 19
y
z
0
105 2 3 4 5 6 8 106 2 3 4 5 6 8 107 2 3 4 5 6 8 108 2 3 4 5 6 8 109 Hz
f

Example
CANH differential and single ended output
(for the given pulse mismatch)
CANH
A=1.855V
period=4u CA
width=2u NH
84 A
tr= 55.3n –s 1
dB V i ng 2
tf= 55.3n 60  60  78 B le
V
en 3
d4e
72 C do
ut
66 D
5 pu
t[
6 5-
110  60
CANH – E
differential output [ F – 7 – h ] h]
7
2.5V 6.8nF
54 F 8
110 
9
a
48 G
b
51  50  10
c
d
42 H 11
e
f
g
36 I 12
h
i
13
k
30 K
l
14
60  60 
m
CANL
n
A=1.845V 24 L 15
o
p
period=4u 16
q
width=2u 18 M
r
17
s
tr= 53.2n
t
12 N
tf= 55n
u
18 v
w
6 O 19
y
CAN CANH bus 150 

z
0
driver with method 105 2 3 4 5 6 8 106 2 3 4 5 6 8 107 2 3 4 5 6 8 108 2 3 4 5 6 8 109 Hz
termination f
Frequency / Hertz

Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EME&& EMS
EME EMS High
High
&&Automotive
Automotive Voltage
Voltage
transients High
transients High Temp.
Temp.

EMS DPI test
Measurement set-up
directional coupler
50 50
RF power
source 50
DUT
prot
couple
R
C
Pfwd Prefl
The measurement set-up uses a power source

 For Zin(DUT) > 200, the power source can be
replaced by a voltage source.
 For Zin(DUT) < 50, the power source is better replaced by a
current source (Norton equivalent)
Note that Zin(DUT) is frequency and signal dependent

EMS DPI test
Simulation models
50
Ccouple Rprot DUT Ccouple
DUT
RF voltage source RF current source

Zin > 200 50 Zin < 200
V = AV · sin(·t) I = AI · sin( ·t)
Simulation model for Zin > 200 Simulation model for Zin < 50
Guideline for amplitude AV Guideline for amplitude AI
AV = 22V @ 5W DPI (level 1)  50  Zin 
AV = 7V @ 0.5W DPI (level 2) A I  Pinj  
 50  Zin 
AV = 2.2V @ 50mW DPI (level 3)
Pinj : required immunity level
EMS compliance levels
 Not all I/O pins of the IC are connected to the
wiring harness and unprotected.
 Level 1: direct connection to the environment
 Level 2: direct connection to the environment but
some external low-pass filtering is available.
e.g. signal conditioning input stages, direct
sensor interfaces …
 Level 3: No direct connection of the I/O to the
environment.
e.g. interface chips connected to sensor chips in
the same module, A/D converter input stages …

EMS compliance levels
EMS caused malfunction is not always detrimental
Class A: all functions of a device/system perform within
the specification limits during and after the exposure
to the disturbance.
Class B: some functions can go temporarily beyond the
specification limits during the exposure. The system
recovers automatically after the exposure.
Class C: some functions can go temporarily beyond the
specification limits during the exposure. The system
does not recover automatically but requires operator
intervention or system reset.
Class D: degradation or loss of function, which is not
self-recoverable due to damage of the IC or loss of
data.
EMS what happens
The incident high-frequency electro-magnetic
power is partially absorbed in the IC and
causes disturbances in different ways:
1) Large HF voltages into a high-impedance node
2) Large HF currents into a low-impedance node
3) Large HF power into a node, which switches
from high-impedance to low-impedance at
device limits, at protection voltages or at frequency
breakpoints.
 Rectification/pumping, Parasitic devices/currents
and Power dissipation are the three important
disturbing effects of EMS
EMS what happens
1) Large HF voltages into a high-impedance node
 Medium power dissipation e.g. 9% of DPI for 1k
 Linear large signal behavior of components and
structures in the signal path  no effect
 Non-linear behavior of components and structures in
the signal path  rectification effects (pumping) on
capacitors in the signal path. : important disturbance
on a chip e.g. bias pumping
 Capacitive coupling input devices into the substrate
e.g. large driver in the OFF state, ESD structures
 substrate currents and substrate bounce : important
effect for latch-up, pumping …
 Capacitive coupling to adjacent devices or structures
e.g. Cm = 100fF gives | Zm | = 10 k at 159MHz
EMS what happens
2) Large HF currents into a low-impedance node
 Large power dissipation e.g. 83% of DPI for 10 :
Important effect on chip.
 Linear large current behavior of components and
structures in the current path  no effect
 Non-linear large current behavior of components and
structures in the current path  rectification effects
(pumping) in the signal path: important disturbing
effect on a chip.
 Inductive coupling to adjacent devices or structures :
only important for bondwires and leadframe
e.g. 100mA @ 159MHz gives ~ 750mV in an adjacent,
open wire.

EMS what happens
3) Large HF power into a node, which switches
from high-impedance to low-impedance
e.g. at device limits or at protection voltages
or at frequency breakpoints
 Combines high voltage and large currents
 Large power dissipation in clipping devices or protection
structures  Important effect
 clipping activates parasitic devices & current paths
 large current peaks in the supply lines or other
pins generates EME in other loops on the PCB.
 large current peaks in the substrate through
parasitic devices  important effect
e.g. latch-up, substrate coupling …
 Nature of the signal path can change with frequency
 important effect, difficult to cope with.

EMS how to cope with
 Guidelines
 Use good large signal and HF models
 Include all parasitic components of the devices
(internal and external)
 Design, simulate and layout with all parasitics
 Avoid rectification : make circuits symmetrical
 Differential circuit topologies and layout
 Limit voltage input range of sensitive devices such
that they do not go in non-linear behavior or in
degradation conditions.
 Limit frequency input range of sensitive devices :
band-limited signals
EMS how to cope with
 Make circuits robust for rectification
 Design for high CMRR & PSRR
 Keep internal node impedances low
 Keep sensitive nodes on-chip
 Avoid / control parasitic devices and currents
 Use protection devices that clip beyond the
required EMS injection levels
 Make protection levels symmetrical
with respect to the signal
 Minimize substrate currents
 Collect substrate currents in controlled points
Example
Rectification
LF: both the NMOS/OpAmp circuit
and the LP-filter follow the CHIP
input variations
LP-filter
 Iout is correct
Vref Iout
MF: the NMOS/OpAmp circuit follows Vin
and conducts a linear current in the
PMOS diode. VgsPMOS(Id) is non-linear
and the LP-Filter output voltage is the Rext DPI
ESD
mean of the rectified VgsPMOS source
(pumping)
 Iout decreases
HF: the NMOS/OpAmp becomes a Source
follower which rectifies the input LF: below LP-filter & OpAmp GBW
current, The rectified current is largely MF: between LP-filter & OpAmp GBW
linearized in the PMOS diode before HF: above LP-filter & OpAmp GBW
the LP-filter. Note: at high DPI voltages, the ESD and
 Iout returns to correct value NMOS diodes can also rectify the
current (below OpAmp GBW)

Example
Current source error (filtered) Effect of rectification on the
as function of the DPI source output current (pumping)
voltage and frequency
Iout (% of Iout without DPI source) Iout (%)
99% Vin : 500kHz – 1.0*Aref

100
0.5 Vin
98%
90
95% 80
1.0 Vin Vin : 500kHz – 1.5*Aref

90% 70
80%
1.5 Vin 60
3.0 Vin
50% 2.0 Vin 50

frequency Vin Time/µsec
0% 40
100k 1M 10M (Hz) 20 30 40 50 60 70
Vin: DPI source voltage (arbitrary units)

Example
Rectification in a differential comparator
Comparator Comparator
Vout Vout
input signal input signal
DPI DPI
Source Source
Emitter follower rectification due to large Ccs of current source  replace current source by resistor

Example
Further EMS improvement
Comparator Comparator
Vout Filter Vout

input signal Attenuator input signal
DPI DPI
Source Source
Input Attenuator Input Filter

 large improvement (LF & HF)  large improvement (only HF)
also for LF & HF signals beyond also for HF signals beyond
the supply voltages the supply voltages
 reduced sensitivity  no sensitivity reduction

Example
Effect of the EMS improvements
EMI
DPI source strength (1) original circuit with
(relative units) current source
100
(2) current source
5
replaced by resistor
3
(3) with input attenuator
4
(4) with input filter
10
2 (5) with input attenuator
and input filter
1
The EMI value in the
graph is the maximum
1 value of the DPI source
frequency strength for which the
1M 10M 100M 1G (Hz) comparator gain > 2

Example
Parasitic currents & substrate currents
Example: substrate currents in an ESD protection structure
Isub1
VDD to Substrate
P+ N+ P+
N-tub N-well
P-epi Vertical
N-buried layer & Lateral PNP
P-substrate
INPUT
Lateral NPN
N+ P+ N+ P+ N+
P-well N-well
P-epi N-tub
N-buried layer
VSS Isub2
P-substrate from other N-tubs

Types of Substrate Current
 Three important types of substrate current
 Substrate currents, injected into the substrate by a PNP
transistor where the substrate is the collector, by diode
breakdown, by impact ionization …
 Effect: substrate biasing, which can activate
other parasitic transistors or cause latch-up.
 Substrate currents, extracted from the substrate by a
forward biased diode. This diode becomes a lateral NPN
with any other neighboring N-region as collector.
 Effect: extraction of currents from other distant
N-regions (up to millimeters distance).
 Capacitive currents due to junction or oxide capacitors,
coupled to the substrate.
 Effect: substrate biasing (bounce) & capacitive
coupling to other junctions or oxide capacitors

Example
Problem: for the input strapped to ground, the output toggles
from low to high for low EM injection
Cause: substrate current extraction from the NMOS drain
during negative pulses overrides the bias current
Vbat
Vcc
regulator
Ibias
Vbias
Vclamp
(1.5·Vbe)
large current Vout
Isub pull-up Isub
Vin
Isub
ESD protection
DPI Source for full battery ESD zener diode Schmitt trigger
voltage
Example
Solution: new ESD protection circuit without substrate NPN,
back-to-back zener diodes and shielding of the NMOS gate.
Vbat
Vcc
regulator
Vbias
large current Vout

Isub pull-up
Vin
DPI Source
ESD protection
Schmitt trigger
for positive and back-to-back
LP-filter with shielded
negative battery ESD zener diodes
NMOS-gate
voltages

Outline
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Automotive
Automotive
IC
IC design
design
EMC
EMC && High
High
Automotive
Automotive Voltage
Voltage
transients
transients High
High Temp.
Temp.

Automotive transients
Standard test pulse 1
Standard test pulse 2
Disconnection of a supply from an
Interruption of the current in an
inductive load, while the device
inductor in series with the device
under test remains in parallel with
under test
the inductive load
(ISO 7637, part1)
(ISO 7637, part1)

Standard test pulses 3a and 3b
These pulses simulate transient, occurring as a result of
switching processes. They are influenced by distributed
capacitances and inductance of the wiring harness.
(ISO 7637, part1)

Standard test pulse 4 Standard test pulse 5
BATTERY VOLTAGE DROP: LOAD DUMP:
During motor start, the battery is This happens when the battery is
overloaded and the voltage drops, disconnected while it is being
especially in cold weather. charged by the alternator.
(ISO 7637, part1) (ISO 7637, part1)

Standard test pulses 5 : LOAD DUMP clamped
Load dump amplitude depends on alternator speed and field
excitation. Load dump duration depends on the time constant of the
field excitation circuit and the amplitude.
Today most alternators have an internal protection against load
dump surge. The 6 zener diodes clamp above 24Volt.
For alternators
with autoprotection

Standard test pulse 6 Standard test pulse 7

Simulates the decrease of the
This disturbance occurs when the
magnetic field of the alternator
ignition. current is interrupted.
when the engine stops.
(ISO 7637, part1)
(ISO 7637, part1)

The customer has to define the “Level of Test”
according the needs of his application.
Test pulses Test levels
(ISO 7637, part1) (values agreed to between car manufacturer
and supplier)
Pulse Series Impulse I II II IV
type resistance duration
1 10  2 ms -25V -50V -75V -100V

2 10  50 s +25V +25V +75V +100V
3a 50  0.1 s -40V -75V -110V -150V
3b +25V +50V +75V +100V
4 10  up to 20 9V 7V 6V 5V
sec
(12V -3V) (12V-5V) (12V-6V) (12V-7V)
5 1 up to +35V +50V +80V +120V
400ms
Typical requirement today: Level IV, except Load dump: Level II - III.
aaaaaaaaaaaaaaaaaaaa

Transients – What happens
 Automotive transients (ISO-7637-1): electrical
transient conduction along the supply lines only.
 other IC pins indirectly connected to supply
via load devices (outputs) or sensors (inputs)
 ISO-7637-1 describes two types of pulses
 Pulse 4 defines the minimum battery voltage.
Note: battery voltage = module supply voltage.
Internal IC supply voltage = module supply
– reverse battery diode
– module supply regulator
– internal supply regulator of the chip.
 Pulses 1, 2, 3a, 3b, 5, 6 and 7 describe high voltage,
high power transient disturbances on the supply line.

Transients – what happens
 The high voltage, very high power transient
disturbances can cause excessive substrate
currents and power dissipation in the IC if
they exceed the voltage capability of the chip.
The IC can only survive if:
 Transient peak voltages blocked
e.g. high-voltage techno or lower level transient spec
 Transient voltages externally limited
e.g. static with zener diodes (clamped load dump)
e.g. dynamic limitation with RC (all other pulses)
e.g. reverse battery protection diode
 Peak currents internally or externally limited
e.g. series impedance of load or sensor or external R
e.g. low impedance output dynamically switched-off

Automotive transients – example
Typical input supply
Vbatt Vbat_filtered
protection
Vcc  reverse bias diode
band regulator
gap  RC-filter (pulses 1, 2, 3a, 3b)
Vbat_filtered Vcc Low-side NDMOS driver

Low-side Driver
+/- 100V input range with ± 100V input range
 NDMOS with reverse
voltage diode (PNP)
 NDMOS drive logic with
D
slope control
 Clamp circuit to prevent
lateral NPN activation
NDMOS driver dynamic
OFF ON during fast negative pulses
clamp to prevent
with negative
voltage diode
Schaffner
clamp
control logic
(slope control)
substrate current below ground
extraction

Automotive transients – example
Bandgap with improved tolerance for
substrate currents and temperature
Vbatt Transient or EMC induced substrate
current extraction
and high temperature leakage
currents from all N/Sub diodes.
(NPN collectors, PMOS N-well,
NMOS S/D diffusions)
Transient or EMC induced current
Vbg
n:1
injection into the substrate,
connected to AGND.
Capacitive coupling through all
N/Sub diode capacitors
 No direct effect on the most
sensitive bandgap circuits:
AGND
bipolar PTAT and OpAmp input
stage.

Result
Result
Quality
Quality
Cost
Cost &
& TTM
TTM &
& Safety
Safety
Fully
Fully compliant
compliant
Automotive
Automotive
Automotive
Automotive
IC
IC design
design
IC
IC design
design
EMC
EMC && High
High
Automotive
Automotive Voltage
Voltage
transients
transients High
High Temp.
Temp.

Result
Combination of Silicon
and Design Technology
for Automotive Applications

Ackowledgments
 This work would not have been possible

without the cooperation and dedication of
many colleagues at AMI Semiconductor.
 I would like to thank in particular:
Michel De Mey, Aarnout Wieers,
Geert Vandensande, Hans Gugg-
Schweiger, Eddy Blansaer, Luc Dhaeze,
Koen Geirnaert, Herve Branquart
and many others.

References – 1
 P. Thoma, “Risks for the automotive industry with regard to the market shift in world-
wide semiconductor demand (in German)”, VDI Berichte nr. 1287, pp 1-12, 12
September 1996.
 “Potential Failure Mode and Effect analysis (FMEA)”, 3th edition, April 2001,
Chrysler Corporation, ford Motor Company, General Motors Corporation.
 IEC 61967-4, “Integrated Circuits – Measurement of Electromagnetic Emissions –
150 kHz to 1 GHz, Part 4: Measurement of Conducted Emission, 1Ohm/150Ohm
Method”.
 IEC 62132-4, “Integrated Circuits – Measurement of Electromagnetic Immunity –
150 kHz to 1 GHz, Part 4: Direct RF Power Injection Method”.
 ISO 7637-1 , ISO 7637-2, Road Vehicles – Electrical Disturbance by Conduction
and Coupling, vehicles with nominal 12V (part 1) and 24V (part 2) supply voltages –
Electrical transient conduction along supply lines only.
 J. Kassakian, “Challenges of the New 42Volt Architecture and Progress on its
International Acceptance”, VDI Berichte nr. 1415, pp. 21-35, 08 October 1998
 Hans-Dieter Hartmann, “Standardisation of the 42V PowerNet - History, Current
Status, Future Action”, HDT conference "42V-PowerNet: The first Solutions",
Villach, Austria, September 28-29, 1999

References - 2
 K. Ehlers, “The effect of the 3-litre car on the architecture of the automotive
electrical system“, 5.98, http://www.sci-worx.com → Partner → Forum
Bordnetzarchitektur
 Ivars G. Finvers, J. W. Haslett, F.N. Trofimenkoff, “A High Temperature Precision
Amplifier”, IEEE Journal of Solid-state Circuits, vol. 30, pp 120-128, February 1995.
 Paul C. de Jong, “Smart Sensor systems for High-Temperature Applications”, PhD
dissertation, T.U. Delft, the Netherlands, November 1998.
 Paul C. de Jong, Gerard C. M. Meijer, Arthur H. M. van Roermond, “A 300°C
Dynamic-Feedback Instrumentation Amplifier”, IEEE Journal of Solid-State Circuits,
vol. 33, pp. 1999-2009, December 1998.
 “High Temperature Electronics”, edited by F.Patrick McCluskey, Richard
Grzybowski, Thomas Podlesak, CRC Press, Boca Raton, Florida, 1997, ISBN 0-
8493-9623-9
 W. Wondrak, A. Dehbi, G. Umbach, A. Blessing, R. Getto, F. P. Pesl and W. Unger,
“Passive Components for High Temperatures: Application Potential and
Technological Challenges” AEC Reliability Workshop, Nashville 2004
 Ron Schmitt, “Understanding Electromagnetic Fields and Antenna Radiation takes
(almost) no Math”, EDN magazine, March 2, 2000, pp 77-88.
References - 3
 Wolfgang Horn, Heinz Zitta, “A Robust Smart Power Bandgap Reference Circuit for
Use in an Automotive Environment”, IEEE Journal of Solid-state Circuits, vol. 37, pp
949-952, July 2002.
 M. De Mey, “Robustness in Analog Design”, Proceedings of the 12th Workshop on
the Advances in Analogue Circuit Design, AACD 2003, 15-17 April 2003, Graz
Austria
 B. Deutschmann, “Improvement of System Robustness through EMC Optimization”,
Proceedings of the 12th Workshop on the Advances in Analogue Circuit Design,
AACD 2003, 15-17 April 2003, Graz Austria
 D. Temmen, “Noise rejection of clocked interference sources (in German)”, VDI
Berichte nr. 1646, pp. 599-618, 27 September 2001
 Robert J. Widlar, “Controlling Substrate Currents in Junction-Isolated IC’s”, IEEE
Journal of Solid-state Circuits, vol. 26, pp 1090-1097, August 1991.
 Bruno Murari, “Power Integrated Circuits, Problems, Tradeoffs and Solutions”, IEEE
Journal of solid-state Circuits, vol 13, pp 307-319, June 1978

Electronic Circuits in An Automotive Environment: Herman Casier AMI Semiconductor Belgium

Загружено:

Сведения о документе

Исходное описание:

Оригинальное название

Авторское право

Доступные форматы

Поделиться этим документом

Поделиться или встроить документ

Параметры публикации

Этот документ был вам полезен?

Это неприемлемый материал?

Авторское право:

Доступные форматы

Electronic Circuits in An Automotive Environment: Herman Casier AMI Semiconductor Belgium

Загружено:

Авторское право:

Доступные форматы

 Electronic Circuits

 Cost and Time To Market

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 2

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 3

 EME – Electro Magnetic Emission

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 4

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 5

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 6

> 1920 + pneumatic systems low high technical skills

> 1980 + electronic systems congestion low technical skills

> 2010 + nanoelectronics congested very low technical skills

> 2040 + robotics maximal and no technical skills

 Low intelligence electronic systems

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 9

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 10

ADAM : Automatic Driver for Auto-Mobile

 Driver has become the Passenger for the complete

ADAM becomes an Anarchistic Driver And Madman

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 11

HBIMOS (2.0µm) I2T (0.7µm) I3T (0.35µm)

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 13

1980 1990 2000 2010

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 14

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 15

CAGR = 6.6% (2002–2006) CAGR = 13.2% (2002–2006)

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 18

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 19

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 21

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 22

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 23

 Time To Market is quite long : start design

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 25

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 26

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 27

 FMEA extends from subcircuit to component to

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 29

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 30

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 31

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 32

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 33

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 34

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 35

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 36

42V = 3 X 12 V Lead-Acid Battery

Example of a dual voltage power system 14V/42V

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 39

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 40

 Some systems still require 14V

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 42

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 43

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 45

+ 12V @ charge pump

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 46

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 47

ESD Schaffner V Level

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 48

charge pump with ON / OFF level shifters

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 50

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 51

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 52

2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment slide: 53

Temperate zone, thermally