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ME 6405 Student Lecture

Transistor

Sung-bum Kang
Keun Jae Kim
Hongchul Sohn
Wenwei Xu

October 1, 2009
Georgia Institute of Technology
Contents

11 Introduction to Transistor
(Speaker: Sung-bum Kang)

22 Bipolar Junction Transistor


(Speaker: Keun Jae Kim)

33 Field Effect Transistor


(Speaker: Hongchul Sohn)

44 Power Transistor
(Speaker: Wenwei Xu)

55 Applications of Transistor
(Speaker: Wenwei Xu)
“Transistor” Part 1

11 Introduction to Transistor
(Speaker: Sung-bum Kang)

22 Bipolar Junction Transistor


(Speaker: Keun Jae Kim)

33 Field Effect Transistor


(Speaker: Hongchul Sohn)

44 Power Transistor
(Speaker: Wenwei Xu)

55 Applications of Transistor
(Speaker: Wenwei Xu)
Introduction

 Question #1: How can we transfer original


signal in long distance without loss?

 Question #2: How can we control the TV with


remote-controller?

 Question #3: How can a computer recognize


0(off) and 1(on) for computing?

Amplifier and Electronic Switch are needed.

 Amplifier: any device that changes, usually increases, the amplitude of a signal.
 Electronic Switch: switch that the physical opening and closing is achieved by
applying appropriate electrical control signals.
Introduction
 Early 20th century, vacuum tube was used for the amplifier and switch.

Vacuum Tube Radio ENIAC, the first general-purpose electronic


computer, contains 17,468 vacuum tubes.

 However, Vacuum Tube is too big, fragile, and energy-consuming.

Transistor solved this problem.


Introduction – Invention of Transistor

 Invention
 In 1947, John Bardeen, Walter Brattain,
and William Schockly, researchers at
Bell Lab, invented Transistor.
 They found Transistor Effect: “when
electrical contacts were applied to a
crystal of germanium, the output power John Bardeen, Walter Brattain,
and William Schockly
was larger than the input.”
 In 1956, they were awarded the Nobel
Prize in physics.
 Transistor
 is a semiconductor device commonly
used to amplify or switch electronic
signals. First model of Transistor, 1947
Introduction – Progress of Transistor

1941, Vacuum Tube


Edison effect

1948, the first (Germanium) TR


John Bardeen, Walter Brattain, and William Schockly

1954, Silicon TR
At TI Lab, Ease of processing, lower cost, greater power handling,
more stable temperature characteristics

1958, Integrated Circuit

Individual electronic
Now? components were soldered
on to printed circuit boards.

IC placed all
Sep 2009, 22nm silicon wafer components in one chip.

more than 2.9 billion transistors is


Intel CEO Paul Otellini, Sep 23 2009
packed into an area of fingernail
Introduction – Underlying Science

 Semiconductor
 is a basic building material of most integrated circuits.
 is a material that has an electrical resistivity between that of a
conductor and an insulator.
 has a few charge carriers(holes or free electrons) and may hence
be classified as almost insulator.
 However, the conductivity increases by adding impurities(doping).

Silicon is used in most


commercial
semiconductors
Introduction – Underlying Science

 Doping
 P(positive)-type doping is adding a certain type of atoms to the
semiconductor in order to increase holes.
 P-type semiconductor, acceptor

 N(negative)-type doping is adding some amount of an element with


more electrons in order to increase free electrons.
 N-type semiconductor, donor

Add Group V (Phosphorous) Add Group III(Boron)

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