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V ps V z
I
R
A
150 if
I s 10 11 A • (a)
I s 10 13 A • (b)
3
Answer 2..
VVD VD
a I D I s e 1 I s exp
T
VT
ID VD
exp
Is VT
I V
ln D D
I s VT
ID 150 10 6
VD VT ln 0.026 ln 11
0.430V
Is 10
150 10 6
b V D VT ln 13
10
V D 0.549V
4
Problem 3
current.
5
Answer 3.
a
VD1 I D2 V VD1
I D1 I s exp 10 exp D 2
VT I D1 VT
V D1 V
I D 2 I s exp 10 exp D
VT VT
I D 2 10 I D1 VD
ln 10
VT
I D2
10
I D1 VD VT ln 10 60mV
b V D VT ln 100 120 mV
6
Problem 4
is forward biased.
I D I s exp
VD ID Is
VT VR 1.5 I D R
V ps I D R VD
1.5 30 10 4 10 10 6
VD 1.2V
V ps I s exp V D
VT
By trial and error V D 0.046
1.5 0.046
ID 0.145A
10
8
Problem 5
V0 0.60V
output voltage of .
I1 I2
I3
9
Answer 5..
VD
I 2 I s exp 2.105mA
VT
0.6
I3 0.60mA
1k
I 1 I 3 I 2 2.705mA
I1 2.705 10 3
V D VT ln 0.026 ln 13
Is 2 10
0.606v
V I 2VD VD 1.81V
10
Problem 6
VD
diode voltage and the supply voltageV such that
11
Answer 6..
(a ) I s 5 10 12 A
I 0.50mA
0.5 10 3
V D 0.026 ln 12
5 10
V D 0.479V
5 IR V D V
0.5 10 3 4.7 10 3 0.479 V
V 2.17V
I D1 I D2 values of and ?
13
Answer 7.
1
I D1 I D2
2
0.65
I D1 I R 0.65mA
1
5 3 0.65
I D 2 1.3mA
R1
R1 2.35k
I D1 0.65m I D 2 1.30mA
14
Problem 8
Q8. (a) Using Table 1.1, determine the resistance of a silicon sample
having an area of 1 cm2 and a length of 3 cm.
(b) Repeat part (a) if the length is 1 cm and the area 4 cm 2.
(c) Repeat part (a) if the length is 8 cm and the area 0.5 cm 2.
(d) Repeat part (a) for copper and compare the results.
15
Answer 8
16
Problem 9
17
Answer 9:
18
Problem 10
Q10. (a) Using Eq. (1.4), determine the diode
current at 20°C for a silicon diode with
Is = 0.1 μ A at a reverse-bias potential of 10 V.
(b) Is the result expected? Why?
19
Answer 10
20