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Electronic Circuit Analysis and Design

Semiconductors Materials and Diodes


Dr. Mohammed
Design Example 1
- In the circuit shown in Figure , find the resistance R,
where I = 3 mA

V ps  V z
I
R

The resistance is then:


V ps  V z 10  5.6
R   1.47k
I 3
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Problem 2

• for a pn junction diode, what must be the

forward-bias voltage to produce a current of

A
150 if

I s  10 11 A • (a)

I s  10 13 A • (b)

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Answer 2..
 VVD   VD 
 a  I D  I s  e  1  I s exp 
 T 
   VT 
ID VD
 exp
Is VT
I V
ln D  D
I s VT
ID  150 10 6 
VD  VT ln  0.026 ln 11
  0.430V
Is  10 

 150  10 6 
 b V D  VT ln 13

 10 
V D  0.549V

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Problem 3

• (a) consider a silicon pn junction diode operating in the

forward-bias region. Determine the increase in forward-

bias voltage that will cause a factor of 10 increase in

current.

• (b) repeat part (a) for a factor of 100 increase in current.

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Answer 3.
 a
VD1 I D2  V  VD1 
I D1  I s exp  10  exp D 2 
VT I D1  VT 

V D1  V 
I D 2  I s exp 10  exp D 
VT  VT 

I D 2  10 I D1 VD
ln 10 
VT
I D2
 10
I D1 VD  VT ln 10  60mV

 b V D  VT ln 100  120 mV

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Problem 4

• A pn junction diode is in series with a 10 M resistor and

a1.5V power supply. The reverse-saturation current of

I s  30nA the diode is .

• (a) Determine the diode current and voltage if the diode

is forward biased.

• (b) Repeat part (a) if the diode is reverse biased.


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Answer 4..

 a Forward :  b Re verse bias

I D  I s exp
VD ID  Is
VT VR  1.5  I D  R
V ps  I D  R  VD

 1.5  30  10  4  10  10 6 
 VD   1.2V
V ps  I s exp   V D
 VT 
By trial and error V D  0.046
1.5  0.046
ID   0.145A
10

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Problem 5

• Q 5 : The reverse-saturation current of each diode in


13
I 
the circuit shown in figure P1.27 is
s 2  10 A. .

Determine the input voltage V1 . Required to produce an

V0  0.60V
output voltage of .

I1 I2

I3

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Answer 5..

 VD 
I 2  I s exp   2.105mA
 VT 
0.6
I3   0.60mA
1k
I 1  I 3  I 2  2.705mA
 I1   2.705  10 3 
V D  VT ln   0.026 ln 13

 Is   2  10 
 0.606v
V I  2VD  VD  1.81V

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Problem 6

• Q 6 : (a) In the circuit shown in Figure P1.28, find the

VD
diode voltage and the supply voltageV such that

current is I  0.50mA. . Assume the reverse-saturation


12
I
current is
s  5  10 A. . (b) From the result of part (a)

determine the power dissipated in the diode.

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Answer 6..
(a ) I s  5  10 12 A
I  0.50mA
 0.5  10 3 
V D   0.026 ln 12 

 5  10 
V D  0.479V
5  IR  V D  V
  
 0.5  10 3 4.7  10 3  0.479  V
V  2.17V

(b) P  I DV D   0.5 0.479 


or P  0.24mW
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Problem 7

• Q 7 : Assume each diode in the circuit shown in figure

P1.32 has a cut-in voltage of VY  0.65V. The input


R
voltage is V1  5V . Determine the value of 1 required

such that I D1 is one-half the value of


I D 2. What are the

I D1 I D2 values of and ?

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Answer 7.

1
I D1  I D2
2
0.65
I D1  I R   0.65mA
1
5  3 0.65
I D 2  1.3mA 
R1
R1  2.35k
I D1  0.65m I D 2  1.30mA

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Problem 8
Q8. (a) Using Table 1.1, determine the resistance of a silicon sample
having an area of 1 cm2 and a length of 3 cm.
(b) Repeat part (a) if the length is 1 cm and the area 4 cm 2.
(c) Repeat part (a) if the length is 8 cm and the area 0.5 cm 2.
(d) Repeat part (a) for copper and compare the results.

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Answer 8

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Problem 9

Q9. If 48 eV of energy is required to move a charge


through a potential difference of 12 V, determine
the charge involved.

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Answer 9:

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Problem 10
Q10. (a) Using Eq. (1.4), determine the diode
current at 20°C for a silicon diode with
Is = 0.1 μ A at a reverse-bias potential of 10 V.
(b) Is the result expected? Why?

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Answer 10

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