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first chapters
Introduction
Models for MOS transistor
Passive Components in MOS Technology
Conclusion
Introduction
There is significant interaction between circuit
and device design
Introduction
Models for MOS transistor
The influence of device fabrication on
device characteristics
Conclusion
Depletion Region of a pn Junction
Qb Qss
Vt ms 2 f
Cox Cox
VT 0 2 f VSB 2 f
NMOS device characteristics.
The drain current
In active region
The effect of channel-length modulation :
Xd is function of VDS in the pinch-off region=>
ID varies with VDS =>
In triode region
Decomposition of Gate-Source
Voltage
Vt
VGS Vov
The overdrive
The transconductance
and
Output Resistance
A depletion region exists between the drain region and the end of the channel
=> Xd
given overdrive.
The transition frequency is independent of the overdrive.
channel length
Substrate Current Flow in MOS
Transistors
Impact ionization
This phenomenon creates a parasitic resistance from
drain to substrate and shunts the drain to ac ground.
Model by inclusion of a controlled current generator I DB
from drain to substrate
Poly-Poly Capacitors
MOS Transistors as Capacitors
Conclusion