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NMOS devices are characterized by a wide range of characteristics. Pn junctions all contribute voltagedependent parasitic capacitances. The width of the depletion region controls the basic operation of MOS transistor. The gate-source voltage modifies the conductance of the region under the gate. The drain current in active region is function of VDS in the pinch-off region. The channel exists continuously from source to drain in the saturation region: the channel pinches off before reaching saturation.
NMOS devices are characterized by a wide range of characteristics. Pn junctions all contribute voltagedependent parasitic capacitances. The width of the depletion region controls the basic o…