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Memory Category
SRAM Cell
Larger cell lower density, higher cost/bit Read non-destructive No refresh required Simple read faster access
word lin
bit line
bit line
DRAM Cell
Smaller cell higher density, lower cost/bit Needs periodic refresh, and refresh after read Complex read longer access time
word line
bit line
MRAM Introduction
It is a non-volatile, random access memory technology that is designed to initially replace flash memory and, potentially, DRAM memory. MRAM uses magnetic, thin film elements on a silicon substrate that can be built on the same chip with the logic circuits.
Information flux.
Information Input Information transmission Information Processing Information storage
Outside
word
Output
DRAM, MRAM
MRAM Advantages
Nonvolatile Fast Unlimited Cycles Viable Data Retention 10 years Symmetrical Read/Write
25-35ns for 4Mb at 0.18um technology node
Endurance (>1016 )
Data stored by magnetic polarization
Integrated with Existing CMOS Baseline Compatible with Embedded Designs 4Mb Memory Device sampled
1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive effect" in thin-film structures. 2000 - IBM and Infineon established a joint MRAM development program. 2003 - A 128 kbit MRAM chip was introduced 2004 -Renesas Technology Develops High-Speed, HighReliability MRAM Technology. 2005 - Renesas Technology and Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer.
Ms M
N S
H M
Ms
N S
H
S N S N
Hysteresis Memory !!
FM FM
Insulator (Al2O3)
Ferromagnetic thin films (Co, NiFe) separated by thin nonmagnetic metal spacers (Cu, Au)
Spin-down Spin-up
x
Co Cu
Spin-down
x x
Co
a RMj
x
Co
Spin-up
Cu
Co
Spin-down Spin-up
Mj a
Mj a
Rmin
Spin-down Spin-up
Rmin
Rmin
Rmin
a RMj
( -1)2 GMR = 4
a = Rmin /RMj
Large effects at RT first observed by Moodera et al. PRL 74, 3273 (1995)
[%] TMR
Insulator DRAM: charge of capacitor. 1 Flash, EEPROM: charge on floating gate. Hard ferromagnet FeRAM: charge of a ferroelectric capacitor.
0
Field [Oe]
toppin g
integration
Si circuitry
crust
- Send current through element - Measure its resistance (high or low) But many parallel current paths diode or transistor needed
- Send current through a single element - Measure its resistance (high or low)
N S
S N
Magnetic layer 2 (fixed layer) Magnetic vectors are Magnetic vectors are antiparallel parallel high resistance. 1 low resistance. 0
MRAM normally functions by constructing minuscule magnetic fields at intersections in a grid of nanoscopic power rails. When current attempts to travel through a power rail which is opposing the polarization of one of the magnetic field bits, its current flow is mitigated and the bit value stored by the field is detected by this weakened current flow.
MRAM Cell
Magnetoresistive random access memory (MRAM) uses the magnetic tunnel junction (MTJ) to store information MRAM cell composed of a diode and an Bit Line MTJ stack MTJ stack consists of two ferromagnetic layers separated by a thin dielectric barrier Polarization of one layer fixed, other used Read/Write Current for information storage
Diode
MTJ Stack
Word Line
1 T-1 MTJ MRAM memory cell operation - read Read Mode ISense
To read an MRAM bit, current is passed through the bit and the resistance of the bit is sensed.
Isolation Transistor ON
IEasy
To write an MRAM bit, current is passed through the programming lines generating magnetic fields. The sum of the magnetic field from both lines is needed to program the bit. No moving parts.
IHard
Circuit is faster than the 1T1TMR implementation. on a cell density and cost Less atractive basis. Diode cell: SOI diodes allow the integration of a memory with most circuits without sacrificing silicon wafer surface area. for this aplication havent been SOI diodes suitable developed yet.
Transistorless array:
Large reduce in cell area. Complex circuity required to read bit state, slow read.
V4
M4-DL V3 V2 V1 M1
N+ P-
Pass Xtor
Pass Xtor
Group Select
N+
N+
N+
N+
M4-DL MVia
BE
TJ
TVia
TE
M5-BL
Rmax
Rmin
common source
Rmax
Rmin
Rref = 1/2 * (Rmin + Rmax) Reference Cell Reference Cell uses Parallel/Serial combination of MTJs in two memory states to generate mid resistance reference between those two states
SAF
Top electrode Free AlOx Fixed Ru Pinned AF pinning layer Template Seed Base electrode
Low resistance contact Switches between two magnetic states in applied field. Stores information. Tunnel barrier. Affects resistance and MR ratio. Synthetic Antiferromagnet (SAF). AF coupling through Ru layer makes the structure stable in applied magnetic fields. Relative thickness of Fixed and Pinned used to center loop. Pins the bottom magnetic layers. Seeds growth, determines crystal structure Low resistance contact
On Off On Off
SRAM
MCU
CE Control Chip Battery
System design complexity Board space and weight Battery life Manufacturing complexity Environmental concerns
Addr/Data Bus
MCU
MRAM Solutions
Single chip solution Simple, low cost system design Manufacturing simplification No battery Unlimited life Smaller profile Higher performance Environmentally friendly
Problems
MCU
Addr/Data Bus
Battery SRAM
Off-the-shelf components
Manufacturing Complexity
RAID systems and servers POS terminals Data-acquisition systems Data logging Buffers Currently not targeting high density, space-constrained applications Routers / switches Portable digital audio players Jump drives Printers / copiers Digital camera data storage
System Configuration
Black-box applications Gaming System status
MRAM parameters
MRAM Roadmap ?
4
0.256
Conclusion
Non Volatile No need to refresh (potentially) High density Non destructive read Read speed = write speed; < 50ns Unlimited R/W endurance Soft error immunity
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