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SPIN VALVE TRANSISTOR

Guided by : ARUN C.R

Seminar by, V. BALAJI,E7A

CONTENTS

Introduction The spin valve effect Spin valve transistor Spin valve transistor preparation Other spin-valve configurations Advantages & Applications Conclusion

INTRODUCTION
Conventional electronics are based on charge of electron. Spintronics uses spin polarization of electrons. Giant magnetoresistance. Change in resistance when magnetic field is applied. GMR found in magnetic multilayers. Act as valves for electrons with different spin. Electrons with correct spin travel through device.

SPIN VALVE EFFECT


Observed in materials like transition metals Fe, Co and Ni. Conduction electrons divided to 2-whose spin is parallel to the local magnetization and whose spin is anti parallel. Resistance to flow of current in metal is determined by scattering processes to which they are subjected.

SPIN VALVE TRANSISTOR


Base is formed by spin valve- Co/Cu/Co/Pt sandwich base. Emitter is negatively biased (forward) using a DC current source. The collector substrate is in reverse(positive voltage bias),in common base. Pt layer on top of spin valve is used to make emitter schottky barrier larger than collector barrier,to decrease reflections at collector barrier.

Emitter bias accelerates electrons over emitter barrier. Probability of passing collector barrier is limited by collisions in base, which affect their energy and trajectory (momentum).

PROPERTIES OF SPIN VALVE TRANSISTOR


Exponential amplification of magnetoresistance occurs because electron transfer is exponentially dependent on electron mean free path in base. Measurements can be done at room temperature. Output is a high impedance current source. Resistance of multilayer can be measured with Current In Plane (CIP) or Current Perpendicular to the Plane (CPP)

Three important transport processes affect GMR: 1. Spin dependent bulk scattering in magnetic layers. 2. Spin dependent scattering at the interfaces 3. Reflection at the interfaces due to band mismatch between the layers.

Schottky (Thermionic) injection:


(a) emission of electrons from semiconductor over top of the barrier into the metal (b) temperature assisted tunneling through the barrier: thermionic field emission (c) direct tunneling through the barrier: field emission (d) recombination in the space charge region (e) recombination in the neutral region (hole injection)

Semiconductor transport: collector efficiency


The angle of acceptance in collector is quite small. Electrons with energies just over threshold for transmission that excite phonons in region before Schottky barrier maximum are expected to have high probability of reentering metal. Beyond the Schottky barrier maximum, the internal electric field in the depletion region accelerates the electrons toward the interior of n-type semiconductors.

Schottky reverse saturation current: collector leakage current


Reverse current of collector barrier can be considered to be a parasitic current which limits detection of hot electron current. Principal leakage current is determined by electrons which have a thermal energy larger than barrier height.Obviously this current is very sensitive to temperature.

Impact ionization: avalanche multiplication


If kinetic energy of electrons in collector semiconductor exceeds electron-hole pair generation,impact ionization becomes possible. This process takes place in metal base transistor structures. In reverse biased Schottky diodes,breakdown may occur due to avalanche breakdown.When electric field in a semiconductor is increased above a certain value,carriers gain enough energy so that they can excite electron-hole pairs by impact ionization.

Vacuum bonding: Spin valve transistor preparation


Metallic layers are deposited on two silicon substrates and these are moved to eachother. Results in an in-vacuum metal bond of two substrates with metal layer in between. Next, these samples are lithographically processed and etched to obtain spin-valve transistors.

Deposition of the base layers

Spring 1 is wound up using manipulator 2. Samples 6 is mounted on rotating table 4. Deposition occurs via 5. Substrate selection via magnetically coupled beam3. GMR multilayers and sandwiches are formed.

Emitter wafer thinning


After bonding,emitter substrate is to be thinned down to dimensions of about 1 to 5 micron. Emitter substrate needs a highly doped region for ohmic contact formation. Techniques used are : Grinding and polishing & Etch stop layers

Other spin-valve configurations


Granular GMR:Intermediate between in-plane and perpendicular GMR is created by making small ferromagnetic grains in a metallic matrix. In granular systems ferromagnetic particles are assumed to be single domain and uncoupled.

Granular GMR..
The GMR in granular systems is independent of direction of applied field. The major disadvantage of granular systems is the saturation field which is usually very large.

Inverse GMR :Magnetisation of magnetic layers


orient more into antiparallel directions, like in Co/Cu multilayers going from zero field to coercive field.

Advantages
1. Quantum spin valve transistor uses up and down spin states to generate binary data. 2. Currently spin is used for memory,spin valve transistors use it for logic operations. 3. Amplification and switching properties of device is controlled by external magnetic field applied to the device. 4. Spin current releases heat but it is rather less. 5. They do not require power to maintain their memory state.

Applications
High sensitivity magnetic field sensors for data storage applications. It finds its application towards quantum computer.

MRAMs - faster speeds,high density,low power consumption and nonvolatility.

CONCLUSION
Spin valve transistor is more versatile and robust. Needs to improve magnetic sensitivity of collector current. Spin control is difficult. Pt is to be replaced with metal to minimize cost.

THANK YOU

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