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Toshihiro Mimashi
Gate
ne ― Ca
Gate
n
or
+ P+ thn
en
+-
+vg
OPEN
Depletion
ode
P e
layer
Pe
G A
+ +
Anode Anode
Anode + + +
hole
IGBT
IEGT
BSIT SIThy
MOSFET
CoolMOS
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
Outside
view 15mm/12mm
Φ36mm
Φ62mm
A
r
SIThyristor
High
dig/dt Diode
& Short
up to 2.0E11A/s ( ~
2.8E11As)
dIA/dt
SIThys for the Accelerator as Closing Switches by KEK
Peak Voltage 45 kV Peak Voltage 20kV
Peak Current 6 kA Peak Current 1.3 kA
Pulse Width 5.5μ s Pulse Width 2.0μ s
Repetition 50 Hz Repetition 50 Hz
(a) Switching modulator for Klystron (b) Pulsed power supply for Kicker Magnet
Application to Kicker Magnet Systems
for Fast Injection/Extraction of beam into/from circular accelerator
Hard Requirement for Switching Devices as Kicker Modulator :
40[KV] / 50 [ns]
Low RiseTime Kicker :
A modulator for KEKB injection kicker is working now.
Test Stand of Modulator : 10[KV], 1.8[KA] / 100[nsec] achieved
Current Wave form at R=5.6 ohm (1[KA/div]; 200[ns/div] )
Low Inductive gate driver make it possible to control the SIThy as high speed switch!
Inductance ≈ 6nF
ts=0.4μs
(a) Turn-off waveforms by the Low Inductive gate
driver.
Inductance ≈ 50nF
ts=1.7μs
2240mm
/ 850mm
/ 650mm
by Japan Railways
& Toyo Electric MFG
Inductive Energy Storage (IES) pulsed power supply utilizes the features of SIThy
low
voltage
input High dVdt
voltage
: 1.0E11V/s
, at the Vp:2.1kV
lowest
as 24V
IES
Pulsed
power
supply
Short and high voltage pulse can be
generated by using the pulse-trance;
Vp: over 30kV, peak dVdt: 2.0E11Vs, and
pulse wavelength: 100ns,
Summary
• High voltage SIThys fits for the pulsed power and the soft switching applications.
• The key technology to drive the SIThy is “high Gate driving”, which realize the
short switching time. It is important to minimize the inductance around the Gate
circuit.
• The pulse power supply for the Klystron and kicker magnet by KEK made most
of the features of SIThy having the high tolerance to the high current and to the
high rise-up rated current as over 2.0E11A/s.
• Inductive Energy Storage (IES) pulsed power supply makes most of the features
of the junction-Gate typed SIThy and realizes the compact circuit, which
generates high rise-up rated voltage as over 2.0E11V/s.