DEPARTMENT OF TECHNICAL EDUCATION

ANDHRA PRADESH
Name : K.LAKSHAIAH
Designation : Head Of Section
Branch : ELECTRRONICS & C0MMUNICATIONS
ENGG.
Institute : 028, SIR C.R.REDDY POLYTECHNIC
ELURU.
Year / semester : 1-YEAR
Subject : ELECTRONIC COMPONENTS & DEVICES
Subject Code : EC-105
Topic : TRANSISTORS
Duration : 50 Mts
Sub Topic : Output characteristics of a transistor in a CB
configuration.
Teaching Aids : PPT DIAGRAMS.
EC105.138 1
 OBJECTIVE :

Upon the completion of this topic you will be able to

understand.

• Output characteristics of a transistor in common base (CB)

configuration.

EC105.138 2
 Recap

• In the previous class we discussed the input characteristics of a

transistor in the common base configuration.

• How the characteristics vary with increasing VCB.

• With the help of the same circuit arrangement we will discuss

the output characteristics in the class.
• To determine resistance from input characteristics.

EC105.138 3
Set up to obtain output characteristics of a transistor in CB
configuration.

Fig 1.
EC105.138 4
• It shows the way IC (o/p current) varies with VCB (o/p voltage)

when IE (i/p current) is kept constant.

EC105.138 5
 EXPERIMENTAL PROCEDURE

• First the input current IE is adjusted to zero and kept constant.

• Then by increasing collector to Base voltage VCB ( by increasing

VCC) from zero in a number of steps and corresponding collector

current IC that flows is noted.

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• Next VCB is reduced back to zero, IE is increased to a value little
higher than before and kept constant, the whole procedure is
repeated.

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• The graphs are plotted, by taking VCB on X-axis and IC on Y-
axis. The family of curves thus obtained are output
characteristics of CB transistor are shown in fig : 2.

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Out put characteristics

(Vcb)

Fig 2.
EC105.138 9
 EXPLANATION :

• If IE = 0 then there are no injected carriers in the base.

• There fore no injected carriers current in the JC.

• But a small amount of leakage current ICBO (ICO) at JC will flow

due to thermally generated carries in the base and collector.

• This ICO is also called collector reverse saturation current.

EC105.138 10
• If VEE is increased IE increases. keeping IE constant if VCB is

increased the increment in IC will be nominal.

• It is clear from the family of o/p characteristics curves that they

are parallel. i.e., IC is less dependent on VCB where as it is much

depending on IE.

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• We can find output resistance from the curves :

R0 = (∆VCB)/(∆IC) which is very high.

EC-105.138 12
Summary

• The relation between IC and VCB keeping IE constant is called

output characteristics of common base transistor.

• Even with IE = 0 there is some current in the collector, called

reverse saturation current ICO.

• ICO is temperature dependent.

• The family of O/P curves are parallel.

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Frequently Asked Questions

• Explain the output characteristic curves of a transistor in

common base configuration.

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QUIZ

• If emitter current in a transistor is 1mA, then

1mA
collector current is nearly__________.

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QUIZ

• The reverse saturation current is because of

minority
____________ carries.

EC105.138
QUIZ

ICO
• When IE = 0, IC = __________.

EC105.138
QUIZ

doubles for every 10oC rise in

• ICO _________
temperature.

EC105.138
QUIZ

• Typical value of RO for CB transistor is

Very high
___________.

EC105.138