Department Of Technical Education

Andhra Pradesh
Name :G sudhakar reddy.
Designation :Senior lecturer.
Branch: :ECE
Institute :Government polytechnic
narsipatnam.
Year/semester :iii semester.
Subject :Electronics circuits-i.
Subject code :EC-302.
Topic :FET&UJT.
Duration :100min
Sub topic :Depletion MOSFETs
Teaching aids :animation & photographs

EC302.37 TO 38 1
OBJECTIVES

Upon the completion of this topic the student will be able

to know

• Construction of Depletion MOSFETs.

• Symbols of Depletion MOSFETs.
• Working principle of n- type depletion MOSFET
• Working principle of p – type depletion MOSFET

EC302.37 TO 38 2
 DO YOU KNOW
ENHANCEMENT MOSFET
D D

substrate

G
G
S S

N channel
N channel

EC302.37 TO 38 3
CIRCUIT SYMBOLS OF DEPLETION TYPE MOSFET

DEPLETION MOSFET
D
D

substrate
G
G

S S

N channel N channel

EC302.37 TO 38 4
 CONSTRUCTION

• Depletion MOSFET may be

source Al layer Drain fabricated from the basic
Gate
Si o2 MOSFET structure.
layer
n+ n+
Diffused • An n-type channel is obtained
n channel
by diffusion between N+ type
p-type substrate source and drain in an n-
channel MOSFET.
N channel Depletion MOSFET

EC302.37 TO 38 5
 CONSTRUCTION

source Al layer Drain

Gate
Si o2
layer
n+ n+
•In depletion MOSFET a
Diffused
lightly doped n-type
n channel channel has been introduced
between to heavily doped
p-type substrate source& drain blocks,.

N channel Depletion MOSFET

EC302.37 TO 38 6
 CONSTRUCTION OF P CHANNEL
DEPLETION MOSFET
•Depletion MOSFET may be
source Al layer Drain
Gate fabricated from the basic
Si o2 MOSFET structure.
layer
n+ n+
Diffused •An p-type channel is obtained
n channel
by diffusion between p+ type
source and drain in an p-
p-type substrate channel MOSFET.

P channel Depletion MOSFET

EC302.37 TO 38 7
source Al layer Drain
Gate
Si o2
layer
n+ n+ •In p-channel depletion MOSFETs
Diffused are made by using n-type
n channel
substrate and diffusing a
lightly doped p-type channel
p-type substrate
between two heavily doped
P-type source & drain blocks
P channel Depletion MOSFET

EC302.37 TO 38 8
Symbols of p channel depletion MOSFET

D
D

substrate
G
G
S
S

P channel P channel

EC302.37 TO 38 9
 Working • Negative gate operation of a
depletion MOSFET is called
Its depletion mode Operation

source Al layer • When Vgs =0 electrons can

V GS Gate Drain
Si o2 flow freely from source to
layer drain through the conducting
channel. since a channel
n++++++++++
p-type substrate exists between drain &
source, Id flows even when Vgs
=0.

• It is also known as normally –

N channel Depletion MOSFET ON MOSFET

EC302.37 TO 38 10
 Working
When negative voltage is
applied to the gate as shown
in Fig positive charges are
source Al layer induced in the channel by
V GS Gate Drain
Si o2 capacitor action
layer
The induced positive charges
n++++++++++ make the channel less
p-type substrate conductive and drain current
decreases as V GS is made
more negative.

N channel Depletion MOSFET

EC302.37 TO 38 11
 Working

source Al layer
V GS Gate Drain
Si o2
layer

n++++++++++

N channel Depletion MOSFET

With negative voltage a depletion MOSFET behave

like JFET.

EC302.37 TO 38 12
• When positive voltage is applied to the gate free

electrons are Induced channel .

• This enhances the conductivity of the channel so

increasing amount of current between terminals

• Since the action of negative voltage on gate is to

deplete the channel of free n-type charge carriers so

named as depletion MOSFET.

EC302.37 TO 38 13
Drain Characteristics of depletion MOSFET

Id(ma)

}
VGS= +2V
• When the gate source
VGS= +1V Enhancement
voltage is zero
8 Mode considerable drain current
VGS= 0V flows.
6
VGS= -1V
• When the gate is applied
4 VGS= -3V } Depletion
Mode
with negative voltage,
positive charge are
2 induced in the n-channel
V ds through the SiO2 layer of
5 10 15 20 the gate capacitor.
0
Fig.38.3
EC302.37 TO 38 14
Drain Characteristics of depletion MOSFET
Id(ma)
• The conduction in n-

6
} Enhancement
Mode
channel FET is due to
electrons i.e., the
majority carriers.

•Therefore the induced

4 positive charges make
} Depletion
Mode
the n-channel less
conductive.
2

V ds •The drain current

0 5 10 15 20 therefore gets reduced
Fig. 38.3 with increase in the gate
bias voltage.
EC302.37 TO 38 15
Drain Characteristics of depletion MOSFET
Id (ma) • The distribution of charges

}
in the channel results in
Enhancementdepletion of majority carriers.
8 Mode
• That is why this type of FET
6 is called depletion MOSFET.

4 } Depletion
Mode
• The voltage drop due to the
drain current causes the
2 channel region nearer to the
V ds drain to be more depleted
0 5 10 15 20 than the region due to the
source.
Fig. 38.3

EC302.37 TO 38 16
 Drain Characteristics of depletion MOSFET

8
Id(ma)
6
} Enhancement
Mode

2
}Depletion
Mode

V ds
0 5 10 15 20
Fig. 38. 3

• This is similar to the pinch off in JFET.

EC302.37 TO 38 17
Drain Characteristics of depletion MOSFET

• The depletion MOSFET can also be operated in

enhancement mode simply by applying a positive
voltage to the gate

• Application of positive gate voltage results in induced

negative channel in the n-type channel

EC302.37 TO 38 18
Drain Characteristics of depletion MOSFET

• Thus the conductivity of the channel gets increased

the n-channel depletion MOSFET can be used as in
enhancement mode by changing the gate voltage
polarity.

• When a MOSFET is operated this way, we can it as

dual mode MOSFET.

EC302.37 TO 38 19
 SUMMARY

•We discuss about

• N-channel, P-channel depletion MOSFETs
•Their construction, operation& drain characterstics
•This are also called as normal ON MOSFETs.
•These can be operated in both enhancement and
depletion modes.

EC302.37 TO 38 20
 QUIZ

1In a depletion MOSFET channel is

(d)Present
(e)Not present
(f) None

EC302.37 TO 38 21
Frequently asked questions

1. Draw the structural diagram of depletion MOSFET?

1. Draw the SYMBOLS of N- type depletion MOSFET?
2. Explain the working of N-channel depletion MOSFET?
3. Draw the drain characteristics of N-channel depletion
MOSFET?

EC302.37 TO 38 22