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Operating point
Biasing
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Objectives
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Causes for shift of operating point
• Transistor Replacement
(Variations in transistor parameters β,ICBO,IB)
3. Thermal runaway
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Causes for shift of operating point
IC =βIB+(β+1)ICBO
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• ICBO –Collector Leakage Current.
ICBO doubles in value for every 100C increase in
temperature for Ge transistor.
25 0.1 50 0.65
100 20 80 0.48
Q point at 100°c
Q point at 25°c
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At 25°c
EE-305.65 At 100°c
Transistor Replacement
• The value of β and VBE are not exactly the same for any
two transistors even of the same type.
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Collector characteristics and operating point
ICBO
ICBO
T T T ICEO ICEO
IC
IC
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Thermal runaway
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Bias Stabilisation
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Summary
• Thermal runaway.
• Stabilisation.
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QUIZ
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2. When the temperature changes the operating point is
shifted due to
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