Presented by:

PREETPAL SINGH (A2326411009)

HIGH POWER LEDs METHOD OF GENERARING HIGH POWER LEDs FLIP CHIP TECHNOLOGY WIRE BONDING RELIABILITY OF LEDs RELIABILITY ISSUES HUMIDITY EFFECT TEMPERATURE EFFECT

GaN based LEDs are considered here. >III-V semiconductor >Crystal structure >So-called wide band-gap >(AL)Ga(In)N material system spans visible spectrum >Very high refractive indices

Advantages: >flip chip assembly is much smaller than a traditional carrier-based system. >short wires greatly reduce inductance. >higher-speed signals. >conduct heat better.

Disadvantages: >not suitable for easy replacement, or manual installation >require very flat surfaces to mount to, which is not always easy to arrange >difficult to maintain as the boards heat and cool

Aging :
The intensity of the emission radiation of a luminescence diode operating under constant conditions diminishes continuously. This behaviour is known as aging or degradation

Life Cycle: The life cycle of an LED is defined as the time in which the light power, at a selected ambient temperature and forward current, falls below 50 percent of the original luminous flux measured .

Junction temperature Humidity Environmental temperature Elements used in LED formation

Light scattering induced by trapped moistures in silicone epoxy. A monotonically decrease in the ratio of the intensity of blue to yellow wavelength of the white packaged LEDs, indicating that the luminous flux degradation due to the blue emission is more severe, and hence it is likely to be GaN-based chip related failure. Failure analysis shows that they are cracked die at the edge due to the high vapor pressure entrapped in the package and the insufficient coverage of the die attached below.

The devices tested featured a quadratic dependency of the forward voltage drop as opposed to the junction temperature for a given injected current. The experimental results confirm that the dynamic resistance features a shift due to changes in the junction temperature.

IEEE papers sent by Dr. Cher Ming Tan D. Gacio1; J. M. Alonso1; J. Garcia1; M. S. Perdigao2;, E. Saraiva; F. E. Bisogno;,Effects of the Junction Temperature on the Dynamic Resistance of White LEDs, 2010 IEEE Energy Conversion Congress and Exposition, ECC 2010, 12-16 September 2010, pp. 171 178. Shah, J.M.; Li, Y.-L.; Gessmann, T.; Schubert, E.F.; Experimental analysis and a new model for the high ideality factors in GaN-based diodes, in Journal of Applied Physics, vol. 94, Issue 4, pp. 2627-2630. August 2003. Jeong Park; Lee, C.C.; An Electrical Model With Junction Temperature for Light-Emitting Diodes and the Impact on Conversion Efficiency, in IEEE Electron Device Letters, vol. 26, Issue 5, pp. 308- 310. May 2005.

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