- ДокументLabel free biosensorзагружено:Mamidala Jagadesh Kumar
- ДокументQuantum Computing in Indiaзагружено:Mamidala Jagadesh Kumar
- ДокументMaking Your Research Paper Discoverableзагружено:Mamidala Jagadesh Kumar
- ДокументHow does the power of "Suggestion" influence students' performance?"загружено:Mamidala Jagadesh Kumar
- ДокументImpact of gate leakage considerations in tunnel field effect transistor designзагружено:Mamidala Jagadesh Kumar
- ДокументCompact Analytical Model of Dual Material Gate Tunneling Field Effect Transistor using Interband Tunneling and Channel Transportзагружено:Mamidala Jagadesh Kumar
- ДокументDielectric-Modulated Impact-Ionization MOS (DIMOS) Transistor as a Label-free Biosensorзагружено:Mamidala Jagadesh Kumar
- ДокументDoping-less Tunnel Field Effect Transistorзагружено:Mamidala Jagadesh Kumar
- Документ“Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performanceзагружено:Mamidala Jagadesh Kumar
- ДокументBack to basicsзагружено:Mamidala Jagadesh Kumar
- ДокументThe malady of technology in our livesзагружено:Mamidala Jagadesh Kumar
- ДокументAn academician’s reminiscences on giving interesting and effective public lecturesзагружено:Mamidala Jagadesh Kumar
- ДокументInGaAs LDMOS Power Transistorsзагружено:Mamidala Jagadesh Kumar
- ДокументBipolar Charge-Plasma Transistorзагружено:Mamidala Jagadesh Kumar
- ДокументSharing of Best Practices or Plagiarism?загружено:Mamidala Jagadesh Kumar
- ДокументBipolar Charge Plasma Transistorзагружено:Mamidala Jagadesh Kumar
- ДокументCan a Bipolar Junction Transistor be made without doping?загружено:Mamidala Jagadesh Kumar
- ДокументApproaches to Nanoscale MOSFET Compact Modeling using Surface Potential Based Modelsзагружено:Mamidala Jagadesh Kumar
- ДокументCompact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOS) including High-voltage and Floating Body Effectsзагружено:Mamidala Jagadesh Kumar
- ДокументNovel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistorзагружено:Mamidala Jagadesh Kumar
- ДокументElectrochemical Doulbe-Layer Capacitors Featuring Carbon Nanotubesзагружено:Mamidala Jagadesh Kumar
- ДокументReflections on Teaching a Large Classзагружено:Mamidala Jagadesh Kumar
- ДокументEstimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliabilityзагружено:Mamidala Jagadesh Kumar
- ДокументIETE Technical Review March 2010 Issueзагружено:Mamidala Jagadesh Kumar
- ДокументA new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applicationsзагружено:Mamidala Jagadesh Kumar
- ДокументAnalytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Circuit Simulationзагружено:Mamidala Jagadesh Kumar
- ДокументNew Silicon-Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) Without PN Junctionзагружено:Mamidala Jagadesh Kumar
- ДокументNew Silicon Carbide (SiC) Hetero-junction Darlington Transistorзагружено:Mamidala Jagadesh Kumar
- ДокументGate-induced Barrier Field Effect Transistor (GBFET) - A New Thin Film Transistor for Active Matrix Liquid Crystal Display Systemsзагружено:Mamidala Jagadesh Kumar
- ДокументA High Current Gain Horizontal Current Bipolar Transistor (HCBT) technology for the BiCMOS integration with FinFETsзагружено:Mamidala Jagadesh Kumar
- ДокументA new Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applicationsзагружено:Mamidala Jagadesh Kumar
- ДокументA new SiGe Stepped Gate (SSG) Thin Film SOI LDMOS for enhanced breakdown voltage and reduced delayзагружено:Mamidala Jagadesh Kumar
- ДокументIETE Technical Review - Research Journal - Table of contentsзагружено:Mamidala Jagadesh Kumar
- ДокументControlling Short-channel Effects in Deep Submicron SOI MOSFETs for Improved Reliabilityзагружено:Mamidala Jagadesh Kumar
- ДокументTwo-Dimensional Analytical Modeling of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET and Evidence for Diminished Short-Channel Effectsзагружено:Mamidala Jagadesh Kumar
- ДокументNanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extensionзагружено:Mamidala Jagadesh Kumar
- ДокументInvestigation of a New Modified Source/Drain for Diminished Self-heating Effects in Nanoscale MOSFETs using Computer Simulationзагружено:Mamidala Jagadesh Kumar
- ДокументDiminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal Oxide Field Effect Transistors due to Induced Back-Gate Step Potentialзагружено:Mamidala Jagadesh Kumar
- ДокументInvestigation of the Novel Attributes of a Single-Halo Double Gate SOI MOSFETзагружено:Mamidala Jagadesh Kumar
- ДокументA New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET – Two-dimensional Analytical Modeling and Simulationзагружено:Mamidala Jagadesh Kumar
- ДокументEvidence for suppressed Short-channel effects in deep Submicron Dual-Material Gate (DMG) Partially Depleted SOI MOSFETs – A Two-dimensional Analytical Approachзагружено:Mamidala Jagadesh Kumar
- ДокументShOC Rectifierзагружено:Mamidala Jagadesh Kumar
- ДокументSilicon-on-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performanceзагружено:Mamidala Jagadesh Kumar
- ДокументRealizing wide bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with Low Collector-Emitter Offset Voltage and High Current Gain-A Novel Proposal using Numerical Simulationзагружено:Mamidala Jagadesh Kumar
- Документ2D-Simulation and Analysis of Lateral SiC N-emitter SiGe P-base Schottky Metal-collector (NPM) HBT on SOIзагружено:Mamidala Jagadesh Kumar
- ДокументA New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifierзагружено:Mamidala Jagadesh Kumar
- ДокументA Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performanceзагружено:Mamidala Jagadesh Kumar
- ДокументEnhanced Breakdown Voltage, Diminished Quasi-saturation and Self-heating Effects in SOI Thin-Film Bipolar Transistors for Improved Reliabilityзагружено:Mamidala Jagadesh Kumar
- ДокументA New High Breakdown Voltage Lateral Schottky Collector Bipolar Transistor on SOIзагружено:Mamidala Jagadesh Kumar