, 1999, 33, 1

n-GaAsAs2 Se3
.. , .. , ..
,
236041 ,

( 5 1997 . 30 1998 .)

n-GaAs As2 Se3 . : ,
; , GaAs
; .
.
.

,
, .

GaAs, ,
.
, , ,
[6].
,
(). UC 0 20 .

, , ,
.

, , [1,2].
,
,

[35].
, .

n-GaAs As2 Se3 .

() ,
.
0.3, 1
5 .
. . 1
;
UC = 1
.
, 0.3 ,
1.4 . 1
h = 1.4 1.85 .
,
5 , , , As2 Se3 .

1.9 (. 1). ,
d = 1
GaAs,
As2 Se3 ,
,
(. 2).

n-GaAsAs2 Se3
Ali-GaAsn-GaAsAs2 Se3 Al.


,
n- .
1 1022 3 .
GaAs


() As2 Se3 . 0.3 5 .

.
,
64

 n-GaAsAs2 Se3

. 1. n-GaAs
d, : 1 0.3, 2 1,
3 5.

:
h = 1.4 ( GaAs);
h = 1.95 ( As2 Se3 ).
, , ,
, .
, As2 Se3
d = 0.3 h > 1.9 ,
, ,
(. 1), GaAs. ,

, ,
.
d = 1 GaAs
As2 Se3 h > 1.7 ,
, GaAs, ,
As2 Se3 ,
.
(d = 5 ) ,
As2 Se3 .
, As2 Se3
,
.
GaAs ,
5

, 1999, 33, 1

65

GaAs
(. 1, 3). , ,
,
,
,
.



. , , . 2.
d = 1 . ,
0.5 1
1.31.4 , h = 1.4 ,
.

. 2. n-GaAs
UC , :
a) 1 0.5, 2 1; b) 1 4, 2 10, 3 20.

66

4 20
h = 1.43 ,
,
.

h = 1.751.8 ,
,
4 20
h = 1.97 .

.
,
,
,
.
,

. . 3 , 0 4
.
d = 1 . (0.5,
1 ) ,
,
. 4
.
, (UC 1 )

1.3 < h < 1.4
h = 1.4 .
h = 1.8 .
.
3 (
30 ). .

.
h = 1.4 . .
h = 1.8 ,
h = 1.91.95 .
, .

, , , , ,
. ,

.. , .. , ..

. 3. n-GaAs
UC , :
a) 1 0, 2 1; b) 1 3, 2 4.

(UC 1 )
(. 3).
.

. ,
,
.
,
,
. ,
,
(. 2 . 3).
, 1999, 33, 1

 n-GaAsAs2 Se3

, 4
2.5 ,
+4 .
, , ,
.
. GaAs
, ,
, .
h = 1.4 , ,
GaAs, 4 +4
(. 3).

As2 Se3 GaAs ,
GaAs
( ),
(+ ),
.
1.0 < h < 1.4

, .

Al . GaAs
As2 Se3 .
AlGaAs [7].

. ,
As2 Se3 . 0.3
GaAs,
1 As2 Se3
GaAs, 5
As2 Se3 .
,
GaAs
.
, GaAs, .
, .
,
, (UC < 1 )
,
.
.
5

, 1999, 33, 1

67

[1] . , . . (., 1975) . 12.
[2] .. , .. , .. . . .
, 29, 8, 112 (1986).
[3] V. Venkataraman. Curr. Sci. (India), 67, 11, 855 (1994).
[4] .. , .. , .. , .. ,
.. . . .
80 (, 1980) . 120.
[5] A.M. Andriesh, E.A. Akimova, V.V. Bivol, E.G. Khancevskaya,
M.S. Iovu, S.A. Malkov, V.I. Verlan. Int. J. Electron., 77, 3,
339 (1904).
[6] .. . . 1986. N8021B8.
[7] .. , .. . . . . .
(., 1985) . 80.
..

Study of photosensitivity spectra of

n-GaAsAs2 Se3 heterojunction
I.P. Arjanukhina, K.P. Kornev, U.V. Seleznev
Kaliningrad State University,
236041 Kaliningrad, Russia
Abstract In this paper the results of investigations of spectral photoresponse characteristics of heterojunctions n-GaAs
amorphous film As2 Se3 with different chalcogenide glassy semiconductor film thickness are given. There are some formulas
for calculation of a ligth fraction absorbed in chalcogenide glassy
semiconductor; of a light fraction absorbed in GaAs, taking into
consideration multiple reflections from investigated structure; and
their relationship. The analysis of the structure light absorption is
given, and the model of formation of heterostructure photoresponse
is presented in this article. The experimental results and theoretical
calculations show agreement.