Introduction to Semiconductors

The Diodes

(1-1)

: Doping
: P-type -1
.(1-1)
: N-type -2
. (1-1)
Depletion Layer

( N P )
N
. Recombination P
1

 N
. P

. Depletion Layer
.
Barrier Potential ! "# $%&

. P N
0.7
0.3 Si
V0 . Ge
:

K : Boltsman constant = 1.3810-23 j/k

T : Temperature in Kelvin , K 273+C
q : Electron charge = 1.610-19 C
NA : Acceptor doping density
ND : Donor doping density
ni : intrinsic carrier concentration
Vt( Thermal voltage ) = kt/q
:
25.8 ( 25mV 40mV )
. 300K
: :
.( ) P-N -1
. Ge Si -2
. -3

Forward and Reversed bias )*+, - ./0 1 )

2 - ./0

( 3-1 )

Forward bias ) 2 - ./0 -1

(1-3) P-N
P

.
( )
( V)

.

(1-4)

. P-N (1-4)
P
. ( )
N
.
.
P
N
.
The diode characteristics )
: ;<

(5-1)

Anode P ( 5-1)
. K N A

Knee Voltage ?@,

@ A 6-1

(6-1)

( -6-1)

.

.
( )

. Knee Voltage
:
.

Breakdown Voltage F %/0

@ A 7-1

(7-1)

( -7-1)


.



.
. Breakdown Voltage

. (8-1)

(8-1)

IS : Reverse saturation current

ID : Diode current
VD : Diode voltage
VT : Thermal voltage
7

 IS
.
:
VD

:
ID = - IS
-: )

JK" L M

NMO 3-2

( ni)
( ni2)
.
2mV .
. (9-1)

( 9-1)

Avalanching Q*+

N. -2

(10-1)

.
.


. ( 10-1 ) Avalanching

Surface leakage current ). *

Q*@ F S -3

( 11-1 )

. (11-1)


.
. Surface leakage current


.
Ideal and Practical diodes 9-1
Ideal diode -1

10

(12 -1)

( 13 -1 )

:
. (Vk = 0 ) Vk : . ON
: .
. (12-1)

.
. Automatic switch
Practical diode -2
.

11

( 14-1 )

( 15 1 )

: :
Vk
. (15-1)
:
Open switch
. (15-1) Vk
. (14-)

12

 )(16-1

)(17-1

.
:
Vk
Vk
RF :

13

. RF (17-1)


RF Vk
: .

( 17-1)
. (16-1)
The operating point JK,

/1 load line JK. X< 10-1

(18-1)

:
. :
: (18-1)
+ V - IDR - VD = 0
.

14

 . :
:
1- When VD = 0
V ID = 0
ID = V / R
(V/R,0)
2- When ID = 0
VD = V
(0,V)
. .
:
. Operating Point
:
. IDQ

. VDQ
)

1 @K F @ 1 QK@*K F @
DC Resistance QK@*K F @

( 19 1 )

15

11-1
1

-1



: RD
RD = VD / ID
RD1 = V1 / I1
RD2 = V2 / I2
RD3 = V3 / I3


. RD1 > RD2 > RD3 :
:
.
AC Resistance

( 20 -1 )

16

1 @K F @

- 2



: rD

.
Bulk Resistance

. rB << rD : . rB
rD 0.1
.
The Power of Diode )
[F$! 12-1

( 21 1 )

17


PDmax
.

.

Critical Q Point
Q
. Critical Load Line
.

18