Intemational zeR] Rectifier PD-9.454D IRC530 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated © Current Sense na © 175°C Operating Temperature kelvin © Fast Switching © Ease of Paraileling Current ‘© Simple Drive Requirements Sense Ip = 14A Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ‘The HEXSense device provides an acourate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSense Is used as a fast, high-cutrent switch in non current- sensing applications. Absolute Maximum Ratings Vpss = 100V Seuee | | Rogion) = 0.162 Parameter Units Continuous Drain Current, Vas @ 10V | “[Continuous Drain Current, Ves @ 10V_| A Pulsed Drain Current © Power Dissipation w Linear Derating Factor WI Gate-to-Source Voltage v4 ‘Single Pulse Avalanche Energy @ md ‘Avalanche Current © A Repetitive Avalanche Energy © 88 md Peak Diode Recovery dvidt @ 55 Vins ‘Operating Junction and “55 104175 Siorage Temperature Range “© ‘Soldering Temper Mounting Torque, Thermal Resistance [Parameter ayo Junction-to-Case Recs Case-to-Sink, Flat, Greased Surface = 0.50) = Raya Junction-to-Ambient = =IRC530 TGR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vienjoss _| Drain-to-Source Breakdown Voltage | 100 | — | — | V_|Vese0V, lo= 250A AVieApss/AT,| Breakdown Voltage Temp. Coefficient | — | 0.12 | — | VPC [Reference to 25°C, lo= mA Roosion Static Drain-to-Source On-Resistance_| — | — | 0.16] © |Vos=10V, lo-8.4A © Vesiey Gate Threshold Voltage 20 | — | 40 | V_|Vos-Ves, lo= 250uA ‘Os Forward Transconductance 47 | — | = [S$ [Vos=50V, to=8.44 © loss Drain-to-Source Leakage Current —— = aA ae ie Gate-to-Source Forward Leakage = [= [a0 7, [Ves=20v Gate-to-Source Reverse Leakage = [= F700 Vas=20V a Total Gate Charge = [= T6 To=14A [Qs Gate-to-Source Charge = | = [55 | nC |Vos-80v [Qs Gate to-Drain (‘Miller") Charge | Vos=10V See Fig. 6 and 13 @ tajory ‘Tum-On Delay Time = [os | — | Voo=50V t Rise Time = [ae TT Ag |lont4a tp Tum-Off Delay Time = [2 t= Re=120 t Fall Time = [es = Ro=3.62 See Figure 10 @ bo | Internal Drain Inductance —j|4s | — Eee 2 ot ffrompacags [Ais bs Intemal Source Inductance — |] — andcenter oft Se die contact s Css Input Capacitance = [00 [= Vos=0V Coss ‘Output Capacitance = [320 | =| PF | Vos-25v Cres Reverse Transfer Capacitance —[s fl OMHz See Figure 5 r Current Sensing Ratio 1390 | — [1540 [ — [lo=14A, Ves=10V Coss | Output Capacitance of Sensing Celis | — | 9.0 | — | pF |Vas-0V, Vos= 25V, f=1.0MHz Source-Drain Ratings and Characteristics Parameter ‘Min. | Typ. | Max. | Units Test Conditions s Continuous Source Current lee aa MOSFET symbol (Body Diode) a. [showing the (Qe tsa Pulsed Source Current _|— 66 integral ravers SHE (Body Diode) © -n junction diode. 'S_ Veo Diode Forward Voltage = [= [25 [v_[t28°6, 152148, Ves=0V © te Reverse Recovery Time = [450 [310 [ns _[T.=25°0, ie=14a Qn Reverse Recovery Charge | — [oes [12 [uc |ovat-100As @ ton Forward Turn-On Time [intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo) Notes: © Repetitive rating; pulse width limited by max. junotion temperature (See Figure 11) ® Vop=25V, starting Ty=25°C, L=5251H Ro=250, las=144 (See Figure 12) @ Isps14A, dildts140A/us, VovsVierjoss, Tust75°C @ Pulse width < 300 js; duly cycle <2%,Ip, Drain Current (Amps) Ip, Drain Currant (Amps) lessee Ip, Drain Current (Amps) 5 f2ous PULSE WIOTH Tq = 25 we oF Vps, Drain-to-Source Voltage (volts) sot Fig 1. Typical Output Characteristics, To=25°C 103 (Normalized) 1094 Vps = 50V 20us PULSE _WIOTH — sO Ves, Gate-to-Source Voltage (volts) Ros(on), Drain-to-Source On Resistance Fig 3. Typical Transfer Characteristics IRC530 % ous PASE HE0TH| lite = a75%0 100 108 Vos; Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175°C we ips tar a veg = 10 gad =a0 0” 20 ao 60 BO 100 320 140 160 10 T,, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRC530 Nag = = Hiss = Gas + Cqg. Cas SHORTED] 1209] Cres = Cod oss = Sos * Cao 102 108 Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage i Isp, Reverse Drain Current (Amps) Veg = OV oe 3 TE 7 20 Vso, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage Ves, Gate-to-Source Voltage (volts) g é < z & 5 o s s & FOR TEST CIRCUIT SEE FIGURE 13, ° 3 10 1 a0 2 ‘Qa, Total Gate Charge (nC) Typical Gate Charge Vs. Gate-to-Source Voltage 5 ‘OPERATION IN THIS AREA LIMITED BY Fos (ow) reeasee a ges 758C ae SiNsue Puse| Dae F tf F soe F see 8 409 Vps, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating AreaTER] IRC530 Re Vos pur. 14 00 + el eect E wy racers = : ‘ t EB: Fig 10a. Switching Time Test Cirouit 5 3° Vos f. ‘ we 4 : 0 - 10%. a Vos To, Case Temperature (°C) Yeon) te toon th Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature Thermal Response (Zajc) SINGLE PULSE (THERMAL RESPONSE 1 10) 10% 104 NaTEs: LY tithe 4. OUTY FACTOR, Dets/ea 2. PEAK TyPow x Zenje * Te 10? 0.8 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRC530 TOR) Vary po obtain YDS required tas 200 i vs es = Vop a las. > ean S 4 a “| 3 Fig 12a. Unclamped Inductive Test Circuit g 2 = 0 Vieryoss 2 re ce SEN. a ut m i /N wa boo ae t / \ 275100 asso as / \ Starting T,, Junction Temperature(°C) he — eee eee Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Seabee unene Charge —+ Curent Sampling Resistors Fig 13a, Basic Gate Charge Waveform Fig 13b. Gate Charge Test CircuitISR IRC530 © oman one sur [ig SENS eomTamTEN wife ME ae aan Bq enttundtnaucrmee ‘Snssi es + vst CONTROLLED BY Ry DRIVER SAVE DEVICE GROUP Ao OUT op CONTROLLED BY QUTY FACTOR Fig 14. Peak Diode Recovery dv/dt Test Circuit Sense Ratio (r) a Sense Ratio (r) 00 f= +50] Se Oa BOS Ted TTT) SS Ty, Junction Temperature (°C) Ip, Drain Current (Amps) Fig 15. Typical HEXSense Ratio Vs. Fig 16. Typical HEXSense Ratio Vs. Junction Temperature Drain CurrentIRC530 100] Sense Ratio (1) i a e Fig 17. Typical HEXSense Ratio Vs. Ty = 25°C Tp = 14a : he) My, Gate Voltage Capacitance Meter igh Terminal 620K Yoo 1 620K tance Meter “Terminal ° © w te M1, M2 = HIGH SPEED DIGITAL VOLTMETERS Vas, Gate-to-Source Voltage (volts) Fig 18. HEXSense Ratio Test Circuit Fig 19. HEXSense Sensing Cell Output Capacitance Test Circuit Appendix B: Package Outline Mechanical Drawing - See page 1510 Appendix G: Part Marking Information - See page 1517 TER Intemational Rectifier